Eugene Technology Co., Ltd.

Jeong Hee Jo

Sung Ho Kang

Chang Dol Kim

Hong Won Lee

Gyu Ho Choi

Woo Duck Jung

Sang Soon Jung

Woong Joo Jang

Se Jong Sung

Ryong Hwang

According to an embodiment of the present invention, an apparatus for processing substrate comprising: a susceptor; and a cover unit installed on an upper part of the susceptor, the substrate is placed on the cover unit, wherein the cover unit comprises: a cover frame having one or more air gaps; and one or more covers having a shape corresponding to each of the air gaps and mountable in each of the air gaps, wherein a depth of the air gap is at least three times the thickness of the substrate.

Apparatus and method for processing substrate

Provided is a substrate processing apparatus. The substrate processing apparatus includes a tube configured to provide a processing space, a partition wall configured to provide a discharge space in which plasma is generated, a gas supply pipe configured to supply a process gas to the discharge space, and a plurality of electrodes disposed outside the tube to generate the plasma in the discharge space. The tube has a plurality of recesses recessed inward from the outermost circumferential surface of the tube, and the plurality of electrodes are accommodated in the plurality of recesses, respectively.

Batch type substrate processing apparatus

Provided is a batch-type substrate processing apparatus which supplies, into a processing space, a process gas decomposed in a separate space. The substrate processing apparatus includes: a tube; a substrate support part; a gas supply pipe; an exhaust part; and a plasma reaction part, wherein the plasma part may include a plurality of power supply electrode parts and a ground electrode part.

Batch type plasma substrate processing apparatus

Provided is a substrate processing apparatus. The substrate processing apparatus includes a tube configured to provide a processing space, a partition wall configured to provide a discharge space in which plasma is generated, a gas supply pipe configured to supply a process gas to the discharge space, and a plurality of electrodes configured to generate plasma in the discharge space. At least one of the plurality of electrodes is disposed outside the partition wall, and at least one of the plurality of electrodes is disposed inside the partition wall.

A substrate processing apparatus in accordance with an exemplary embodiments include: a first tube configured to provide a processing space in which a plurality of substrates are processed; a substrate support part configured to load the plurality of substrates in a first direction in the processing space; a plurality of gas supply parts provided with supply ports for supplying a process gas required for a process in which the substrates are processed; an exhaust part configured to communicate with the first tube and discharge process residues inside the processing space to the outside; and a plasma reaction part provided outside the first tube, and configured to decompose, with plasma, the process gas supplied from the gas supply part and provide the decomposed process gas to the processing space.

Growing community of inventors

Yongin-si, South Korea

Jeong Hee Jo