University-industry Cooperation Group of Kyung Hee University

Jeong Gi Kim

Jin Hee Jang

Christophe Avis

Hyo Min Kim

Disclosed is a quantum dot light-emitting diode including a positive electrode, a hole injection layer, a hole transport layer, a light-emitting layer, an electron transport layer, and a negative electrode, wherein the hole injection layer is a p-type oxide semiconductor represented by Formula 1 below:CuSnS&#x2014;(Ga)O,&#x2003;&#x2003;[Formula 1]

Quantum dot light-emitting diode and method of fabricating the same

Provided is a light emitting diode (LED) and a multi-stacked LED including a charge generation junction (CGJ) layer, and a manufacturing method thereof. An LED including an anode, a hole transport layer, a light emitting layer, and a cathode, includes a CGJ layer in a layer-by-layer structure in which an n-type oxide and a p-type oxide formed on at least one surface of the light emitting layer are sequentially stacked. Here, the n-type oxide includes zinc oxide (ZnO) and the p-type oxide is represented by the following Formula: CuSnS&#x2014;(Ga)O. Here, 0.2&#x3c;x&#x3c;1.5.

Light emitting device (LED) and multi-stacked LED including charge generation junction (CGJ) layer, and manufacturing method thereof

The present invention provides a light emitting element using a charge generating layer formed through a solution process and a method for manufacturing the same. The present invention provides a light emitting element comprising a positive electrode, a negative electrode, a light emitting layer, and a charge generating layer, the light emitting element being characterized in that the charge generating layer has a p-type layer, which comprises an organic semiconductor, and an n-type layer, which comprises an oxide semiconductor, formed in a layer-by-layer structure through a solution process.

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Seoul, South Korea

Jeong Gi Kim