Lg Display Co., Ltd.

Jeong-Eun Won

So-Mang Kim

Seul-Gi Choi

The present disclosure provides a quantum dot (QD) light emitting diode including: a first electrode and a second electrode facing each other; a QD emitting material layer positioned between the first electrode and the second electrode and including a QD; a hole auxiliary layer positioned between the first electrode and the QD emitting material layer; and an electron transporting layer positioned between the QD emitting material layer and the second electrode and including an electron-property material and a hole-property material.

Quantum-dot light emitting diode and quantum-dot light emitting display device including the same

The present disclosure relates to a light emitting diode in which a charge transfer layer, which disposed between two electrodes, including an inorganic material in which an amphiphilic ligand is connected to a surface of an inorganic nano particle and to a light emitting device having the diode. The amphiphilic ligand minimizes defects on the surface of the inorganic nano particle, thus charge transfer materials can be stably. Since charge transfer layers and an emitting material layer can be prepared by using an orthogonal solvent, interface morphology between the emissive layers can be improved.

Growing community of inventors

Paju-si, South Korea

Jeong-Eun Won