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Scappoose, OR, United States of America

Jeong Dong Kim

Average Co-Inventor Count = 7.93

ph-index = 1

The patent ph-index is calculated by counting the number of publications for which an author has been cited by other authors at least that same number of times.

Forward Citations = 3

Jeong Dong KimWalid M Hafez (11 patents)Jeong Dong KimRahul Ramaswamy (11 patents)Jeong Dong KimHsu-Yu Chang (11 patents)Jeong Dong KimTing Chang (11 patents)Jeong Dong KimTanuj Trivedi (11 patents)Jeong Dong KimBabak Fallahazad (11 patents)Jeong Dong KimNidhi Nidhi (9 patents)Jeong Dong KimAyan Kar (1 patent)Jeong Dong KimBenjamin Orr (1 patent)Jeong Dong KimJeong Dong Kim (11 patents)Walid M HafezWalid M Hafez (169 patents)Rahul RamaswamyRahul Ramaswamy (45 patents)Hsu-Yu ChangHsu-Yu Chang (31 patents)Ting ChangTing Chang (19 patents)Tanuj TrivediTanuj Trivedi (13 patents)Babak FallahazadBabak Fallahazad (11 patents)Nidhi NidhiNidhi Nidhi (39 patents)Ayan KarAyan Kar (17 patents)Benjamin OrrBenjamin Orr (7 patents)
..
Inventor’s number of patents
..
Strength of working relationships

Company Filing History:

1. Intel Corporation (11 from 54,664 patents)


11 patents:

1. 12453145 - Single gated 3D nanowire inverter for high density thick gate SoC applications

2. 12369358 - Co-integrated high performance nanoribbon transistors with high voltage thick gate finFET devices

3. 12349411 - Gate-all-around integrated circuit structures having dual nanoribbon channel structures

4. 12249622 - Nanoribbon thick gate devices with differential ribbon spacing and width for SOC applications

5. 12040395 - High voltage extended-drain MOS (EDMOS) nanowire transistors

6. 11996403 - ESD diode solution for nanoribbon architectures

7. 11862703 - Gate-all-around integrated circuit structures having dual nanoribbon channel structures

8. 11791380 - Single gated 3D nanowire inverter for high density thick gate SOC applications

9. 11581404 - Gate-all-around integrated circuit structures having depopulated channel structures

10. 11437483 - Gate-all-around integrated circuit structures having dual nanoribbon channel structures

11. 11094782 - Gate-all-around integrated circuit structures having depopulated channel structures

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12/5/2025
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