Electronics and Telecommunications Research Institute

Jeong Dae Suh

Gun Yong Sung

Doo-Hee Cho

Kibong Song

Sang Su Lee

Keongam Kim

Kwang Yong Kang

Doo Hee Cho

Ki Chul Kim

Woo Seok Cheong

Jae Kwang Lee

Yong Goo Yoo

Seok Kil Han

Provided is a thin film transistor (TFT) which uses CIS (CuInSe), including Se, which is a chalcogen-based material, and can provide a rectifying function, and electric and optical switching functions of a diode. The TFT according to the present invention includes, a substrate, a gate electrode formed on a portion of the substrate, an insulating layer covering the substrate and a gate electrode, a plurality of CIS (CuInSe) films formed on the insulating layer so as to cover the region where the gate electrode is formed; and source/drain regions separated from each other so as to comprise a trench exposing a portion of a surface of the CIS films.

Thin film transistor having n-type and p-type CIS thin films and method of manufacturing the same

Thin film transistor having N-type and P-type CIS thin films and method of manufacturing the same

Provided is a method of manufacturing a thin film magnetic head. In particular, a method of manufacturing a thin film magnetic head is provided in which a flow process of a photoresist is applied to separate a hard magnetic layer and a metal multi-layer and a photoresist is used to insulate an upper electrode from a lower electrode in manufacturing a magnetic reproduction device, thereby simplifying and optimizing a manufacturing process and significantly reducing a manufacturing time.

Method of manufacturing thin film magnetic head

A method of manufacturing a double-sided high-temperature superconducting oxide thin film comprises the steps of placing two sintered material targets in a thin film deposition chamber; attaching a single crystal oxide substrate to a substrate supporter piercing through a separator of the thin film deposition chamber; rotating the single crystal oxide substrate, placing two substrate heaters toward both surfaces of the single crystal oxide substrate, and heating the single crystal oxide substrate thereby; applying a power to sputter to the sintered material targets; and depositing a target material on both surfaces of the single crystal oxide substrate by having plasma generated from the two sintered material targets contact thereon.

Method for manufacturing a double-sided high-temperature superconducting oxide thin film having large area

The present invention forms a superconducting junction using a cubic YBa.sub.2 Cu.sub.3 Ox thin film as a barrier layer. The present invention forms a first YBCO superconducting thin film, a SrTiO.sub.3 insulating layer thin film on the substrate, etches a side of them in the form of inclination, subsequently integrates a non-superconducting cubic YBCO barrier thin film, a second YBCO superconducting thin film, a SrTiO.sub.3 protecting layer thin film in series on the whole surface of the substrate, etches an opposite side of the etched part of the SrTiO.sub.3 insulating layer thin film in the form of inclination, fabricates a superconducting junction by forming a metal electrode to said aperture after forming apertures which expose said first YBCO superconducting thin film, the second YBCO superconducting thin film, fabricates a superconducting junction upon forming the metallic electrode to the apertures, and deposits a cubic YBa.sub.2 Cu.sub.3 Ox barrier thin film at a temperature of 600-650.degree. C. and a depositing velocity of 6.5-12.2 nm/s.

Method of fabricating a superconducting junction using cubic YBa.sub.2

A method of manufacturing super conduction field effect transistor having a bi-crystal boundary junction is disclosed. According to the present invention, it is constituted such that on a SrTiO.sub.3 bi-crystal substrate, a bi-crystal super conductive thin films for source and drain electrode having a compound of YBa.sub.2 Cu.sub.3 O.sub.7-x, a non-super conductive oxide layer having a compound of PrBa.sub.2 Cu.sub.3 O.sub.7-x interposed between the bi-crystal super conductive thin films for source and drain electrode and the SrTiO.sub.3 bi-crystal substrate, a boundary channel interposed therebetween, a amorphous insulating layer for gate electrode having a compound of SrTiO.sub.3 deposited on a portion between the bi-crystal super conductive thin films for source and drain electrode above the boundary channel, metal pads for electrode, respectively, formed on the bi-crystal super conductive thin films for source and drain electrode and the amorphous insulating layer for gate electrode are sequentially formed.

Method of manufacturing a super conduction field effect transistor

A laser deposition apparatus for a large area oxide thin film which can enable thin films of a large area to be deposited by varying a target affixing method when performing a pulse laser deposition which most effectively deposits various oxide thin films of a complex chemical composition. The apparatus in accordance with the present invention comprises a tilted target affixed to a rotatable target plate by a target frame such that the target is tilted with respect to the target plate; a substrate heater on which the substrate can be mounted and which can be rotated on its own axis; and an eximer laser installed within a vacuum chamber for irradiating a laser beam to said tilted target.

Growing community of inventors

Daejeon, South Korea

Jeong Dae Suh