Electronics and Telecommunications Research Institute

Intellectual Discovery Co., Ltd.

Jeong-Dae Suh

Gun-Yong Sung

Ki-Bong Song

Myung-Ae Chung

Jung-Min Cho

Eun-Jin Bae

Jae-Min Kang

Cheol-Joo Chae

Chang-Woo Ham

Kwan-Su Kim

A method for diagnosing Alzheimer's disease by detecting the presence of beta-amyloid in cells using a phototransistor device. Cells that potentially contain beta-amyloid are provided and labeled with a multi-protein that selectively binds to beta-amyloid if present and that includes streptavidin, biotin and polyethylene glycol connected in sequence with the streptavidin being bound to a magnetic bead and the polyethylene glycol being bound to the beta-amyloid, to provide labeled cells. A phototransistor device including a channel layer is provided and a difference in photocurrent determined corresponding to incident light measured before and after selectively fixing the labeled cells on a surface of the channel layer by applying an external magnetic field effective to attract the magnetic bead to the phototransistor device through a permanent magnet positioned below the channel. Any difference between the first and second photocurrents indicates the presence of, and optionally amount of, labeled beta-amyloid in the cells.

Method for early diagnosis of alzheimer'S disease using phototransistor

Disclosed herein is a method of fabricating a CIS or CIGS thin film, comprising:

Method of fabricating CIS or CIGS thin film

Disclosed is a method of manufacturing a thin-film light-absorbing layer using spraying, including mixing precursor solutions comprising CuCl, InCland SeC(NH)under a nitrogen atmosphere at room temperature thus preparing a mixture solution; spraying the mixture solution on a substrate and drying it, thus forming a thin film; and selenizing the thin film under a selenium atmosphere. A method of manufacturing a thin-film solar cell is also provided, which includes forming a back contact layer on a glass substrate using sputtering; forming a light-absorbing layer on the back contact layer using spraying; forming a buffer layer on the light-absorbing layer using chemical vapor deposition; forming a window layer on the buffer layer using sputtering; and forming an upper electrode layer on the window layer.

Method of manufacturing thin-film light-absorbing layer, and method of manufacturing thin-film solar cell using the same

Disclosed is a method for making a superconducting field-effect device with a grain boundary channel, the method comprising the steps of depositing a first superconducting thin film on a substrate; patterning the first superconducting thin film to form a patterned superconducting thin film having an opening; depositing a template layer thereon; selectively etching back the template layer to form a patterned template layer; growing a second superconducting thin film to form a grain boundary therebetween; depositing an insulating layer on the second superconducting thin film to protect the second superconducting thin film from degrading in property in the air; selectively etching back the insulating layer to form a patterned insulating layer; forming a gate insulating layer on the patterned insulating layer; and coating metal electrodes thereon, source/drain being formed respectively on the etched portions, and a gate electrode being formed on the deposited portion of the gate insulating layer directly above the grain boundary. In the superconducting FET manufactured thus, since a gate electrode is formed directly above a grain boundary, current flowing between source and drain can be controlled by a voltage applied through an gate insulating layer. Also, since the grain boundary serving as a channel can be formed in a cheaper oxide crystal substrate by variation in a growing temperature of thin film without using an expensive by-crystal substrate, a high-temperature superconducting FET can be economically fabricated.

Method for making a superconducting field-effect device with grain

A superconductor-insulator-superconductor Josephson tunnel junction, comprising: a single crystalline substrate having a perovskite crystal structure; a template layer formed of a b-axis oriented PBCO thin film on the substrate; and a trilayer structure consisting of a lower electrode, a barrier layer and an upper electrode, which serve as a superconductor, an insulator and a superconductor, respectively, the lower electrode and the upper electrode each being formed of an a-axis oriented YBCO superconducting thin film and having an oblique junction edge at an angle of 30.degree. to 70.degree., the barrier layer being formed of an insulating thin film between the two superconducting electrodes, can be operated at a low power with an exceptional speed in calculation and data processing.

Superconductor-insulator-superconductor Josephson tunnel junction and

The invention relates to a high temperature superconducting electric field effect device which creates a dual grain boundary on a superconducting thin film and employs it as a channel. The device comprises a substrate, a bottom layer formed on a predetermined region of the bottom layer, a dual grain boundary channel region formed on the bottom layer, a high temperature source and a drain formed at both end portions of the channel region on the substrate, a high temperature superconducting thin film channel layer formed a predetermined region on the source, the drain and the substrate, dual grain boundaries formed on the high temperature superconducting thin film channel layer, and a gate insulating layer formed on the dual grain boundary channel region.

High temperature superconducting electric field effect device and a

Method for manufacturing a superconductor-insulator-superconductor

The present invention discloses a process for forming an a-axis superconducting junction by adjusting the deposition temperature of an oxide normal conductor layer/and oxide superconductor layer/an oxide insulating layer/an oxide normal conductor layer/and an oxide superconductor layer, which are sequentially multilayered on an oxide single crystalline substrate. According to the present invention, the oxide superconductor layer and the oxide insulating layer have an a-axis oriented perpendicularly, and the oxide normal conductor layer have a b-axis oriented perpendicularly, so that a superconductor Josephson junction may be obtained.

Process for forming A-axis oriented superconducting junction

Disclosed is a method for making a high-temperature super-conducting field-effect transistor with a thick super-conducting channel, the method comprising the steps of depositing a template layer on an oxide crystal substrate by using a pulse laser depositing apparatus; forming a YBa.sub.2 Cu.sub.3 O.sub.7-x layer on the template layer; patterning the YBa.sub.2 Cu.sub.3 O.sub.7-x layer to form a patterned YBa.sub.2 Cu.sub.3 O.sub.7-x layer having an opening and expose a surface portion of the template layer; depositing a YBa.sub.2 Cu.sub.3 O.sub.7-x channel layer on the surface portion of the template layer and over the patterned YBa.sub.2 Cu.sub.3 O.sub.7-x layer, the channel layer having a thickness of from 60 to 100 nm; sequentially forming an SrTiO.sub.3 protective layer and an SrTiO.sub.3 insulating layer on the channel layer; dry-etching back portions of the insulating and protective layers using an etching mask so as to expose surface portions of the channel layer; and forming source/drain electrodes on both the surface portions of the channel layer and at the same time forming a gate electrode on the insulating layer in the opening. In the superconducting FET, the channel layer is formed from 60 to 100 nm in thickness between the substrate and the SrTiO.sub.3 layers. Even through the channel layer is affected by the stress-strain up to approximately 25 nm in depth from each surfaces thereof, since total depth of surface regions of the channel layer affected thus is about 50 nm, the channel layer has a super-conducting center region of from 10 to 50 nm in thickness in which a strain is completely eliminated.

Growing community of inventors

Daejeon, South Korea

Jeong-Dae Suh