Hynix Semiconductor Inc.

Jeong Bok Kim

Bong Soo Kim

a method of semiconductor device isolation, which can minimize an design rule of trenches comprising the steps of providing a substrate where a device isolation region was defined; removing the device isolation region of the substrate using a photolithography process to form trenches; implanting ions into the substrate having the trenches to form an impurity layer having a uniform depth relative to the surface of the substrate; thermally oxidizing the substrate having the impurity layer to form an oxide film; and removing the oxide film.

Growing community of inventors

Kyoungki-do, South Korea

Jeong Bok Kim