Samsung Electronics Co., Ltd.

Jeon Il Lee

Jung-Hwan Kim

Un-Byoung Kang

Chungsun Lee

Kwang-Chul Choi

Jung-Seok Ahn

Joonsik Sohn

Oh Yong Kwon

Jong-Min Lee

Jae Ho Choi

Jinbum Kim

Seokhoon Kim

Seungjin Kim

Sung-Il Cho

Seung Hyun Lim

Bio Kim

Choeun Lee

Seong Hoon Jeong

Yeonjin Lee

Kwan Heum Lee

Jimin Choi

Hyuk Kim

Jae Young Ahn

Juik Lee

Seung Bo Shim

Young Jin Noh

Jung-Bum Lim

Hoin Lee

Jae Myung Choe

Dong Chul Yoo

Kwang Min Park

Sangchul Yang

Sun Taek Lim

Yu-Jin Pyo

A semiconductor device includes a vertical stack of ring-shaped electrodes that are electrically connected together into a top electrode of a capacitor, on a semiconductor substrate. A bottom electrode of the capacitor is also provided, which extends vertically in a direction orthogonal to a surface of the substrate and through centers of the vertical stack of ring-shaped electrodes. An electrically insulating bottom supporting pattern is provided, which extends between a lowermost one of the ring-shaped electrodes and an intermediate one of the ring-shaped electrodes.

Semiconductor devices having highly integrated capacitors therein

A semiconductor device includes a substrate including a first side and a second side opposite to each other, a first penetrating structure that penetrates the substrate, and a second penetrating structure that penetrates the substrate, the second penetrating structure being spaced apart from the first penetrating structure, and an area of the first penetrating structure being more than twice an area of the second penetrating structure, as viewed from the first side of the substrate.

Semiconductor device

Provided are a plasma treatment apparatus and a method of fabricating semiconductor device using the same. The plasma treatment apparatus includes a chamber which provides a plasma treatment space, a bottom electrode disposed in the chamber and supports a wafer, a top electrode disposed in the chamber facing the bottom electrode, a source power source which supplies a source power output of a first frequency to the bottom electrode, a bias power source which supplies a bias power output of a second frequency different from the first frequency to the bottom electrode, and a pulse power source which applies a pulse voltage to the bottom electrode, wherein the bias power output is a bias voltage which is pulse-modulated to a first voltage level in a first time section and pulse-modulated to a second voltage level in a second time section and is applied to the bottom electrode.

Plasma treatment apparatus and method of fabricating semiconductor device using the same

A semiconductor device includes: a substrate including a channel region; a gate dielectric a tunneling layer, a charge storage layer, and a blocking layer sequentially disposed on the channel region; and a gate electrode disposed on the gate dielectric, wherein the tunneling layer has variations in nitrogen concentrations in a direction perpendicular to the channel region, and has a maximum nitrogen concentration in a position shifted from a center of the tunneling layer toward the charge storage layer.

Semiconductor device with a tunneling layer having a varying nitrogen concentration, and method of manufacturing the same

Methods processing substrates are provided. The method may include providing a bonding layer between a substrate and a carrier to bond the substrate to the carrier, processing the substrate while the substrate is supported by the carrier, and removing the bonding layer to separate the substrate from the carrier. The bonding layer may include a thermosetting glue layer and thermosetting release layers provided on opposing sides of the thermosetting glue layer.

Methods of processing substrates

A mobile terminal that can prevent radiation performance deterioration of an antenna is provided. The mobile terminal includes a circuit board in which an antenna and one or more key buttons are mounted, a housing mounted on the antenna and the circuit board, and a case for enclosing a periphery of the one or more key buttons and having a plurality of openings according to the quantity of the key buttons, wherein an antenna adjacent opening among the plurality of openings is extended through a slot toward an edge of the case to embody a loop antenna. Therefore, radiation deterioration of an antenna due to a case can be prevented. In addition, production costs can be minimized, and a desired external appearance of the mobile terminal is not compromised.

Mobile terminal having antenna

A method for processing substrates includes providing a bonding layer between a substrate and a carrier to bond the substrate to the carrier, processing the substrate while the substrate is supported by the carrier, and removing the bonding layer to separate the substrate from the carrier. The bonding layer may include a thermosetting release layer and thermosetting glue layers, wherein at least one of the thermosetting glue layers is provided on each side of the thermosetting release layer.

Methods for processing substrates

The inventive concepts provide methods of manufacturing a semiconductor device. The method includes patterning a substrate to form an active pattern, forming a gate pattern intersecting the active pattern, forming a gate spacer on a sidewall of the gate pattern, forming a growth-inhibiting layer covering an upper region of the gate pattern, and forming source/drain electrodes at opposite first and second sides of the gate pattern.

Methods of selectively growing source/drain regions of fin field effect transistor and method of manufacturing semiconductor device including a fin field effect transistor

Growing community of inventors

Suwon-si, South Korea

Jeon Il Lee