Samsung Electronics Co., Ltd.

Jeon Hwangbo

Hong Jin Kim

Jong-Hyun Kim

Ho-Jin Park

A multi-bit data block testing circuit and method thereof are described. The semiconductor memory device includes a multi-bit data block testing circuit for testing adjacent cell blocks using any one pattern selected from the same data pattern and a different data pattern during a multi-bit test mode. The multi-bit data block testing circuit further comprises a comparator operatively coupled to receive a data signal from each of the adjacent cell blocks. A multi-bit data block input source is interconnected with the multi-bit data block testing circuit via an input port and provides the data patterns during the multi-test mode. A multi-bit data block output receiver is interconnected with the multi-bit data block testing circuit via an output port and receives a test result indication from the comparator of the multi-bit data block testing circuit.

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Suwon, South Korea

Jeon Hwangbo