Qualcomm Incorporated

Jentsung Lin

Paul Bassett

Ajay Anant Ingle

Eai-Hsin Alfred Kuo

Suresh Kumar Venkumahanti

Christopher E Koob

Martin Saint-Laurent

De Dzwo Hsu

Manojkumar Pyla

Robert Allan Lester

Paul D Bassett

A multi-port hybrid full-swing/low-swing memory circuit in a static random access memory (SRAM) device comprises a first wordline driver that comprises a read wordline driver, a second wordline driver that comprises either a read wordline driver or a read/write wordline driver, a memory cell coupled to the first and second wordline drivers, a sense amplifier coupled to the memory cell, and a latch coupled to the memory cell. The memory circuit is capable of achieving high-speed low-swing or low-speed full-swing operations while avoiding the need for a large circuit area on an integrated circuit.

Multi-port memory circuits

Dual-voltage domain memory buffers, and related systems and methods are disclosed. To reduce area needed for voltage level shifters for voltage level shifting, latch banks are provided in a voltage domain of memory buffer read circuitry, separate from the voltage domain of a write data input to the latch banks. A write data input voltage level shifter is disposed between the write data input and the latch banks to voltage level shift write data on the write data input to the voltage domain of the latch banks. In this manner, voltage level shifters are not required to voltage level shill the latch bank outputs, because the latch banks are in the voltage domain of the memory buffer read circuitry. In this manner, semiconductor area that would otherwise be needed for the voltage level shifters to voltage level shift latch bank outputs is not required.

Dual-voltage domain memory buffers, and related systems and methods

An apparatus includes a sense amplifier that has a sense amplifier differential output. The sense amplifier may be in a first power domain. The apparatus may include level shifting circuitry that has a level shifter differential output. The level shifting circuitry may be coupled to the sense amplifier differential output. The level shifting circuitry may include a first transistor and a second transistor. A first sense amplifier output of the sense amplifier differential output may be coupled to the first transistor, and a second sense amplifier output of the sense amplifier differential output may be coupled to the second transistor. The apparatus may further include a latch to store data. The latch may be coupled to the level shifter differential output. The latch is in a second power domain that is different from the first power domain.

Sense amplifier including a level shifter

In a particular embodiment, an apparatus includes a a dynamic circuit structure that includes a dynamic node coupling a precharge circuit, a discharge circuit, and a gated keeper circuit. The gated keeper circuit is enabled by a signal from a discharge delay tracking circuit.

Voltage level shifter with dynamic circuit structure having discharge delay tracking

A method and apparatus for controlling system access to a memory that includes receiving first and second instructions, and evaluating whether both instructions can architecturally complete. When at least one instruction cannot architecturally complete, delaying both instructions. When both instructions can architecturally complete and at least one is a write instruction, adjusting a write control of the memory to account for an evaluation delay. The evaluation delay can be sufficient to evaluate whether both instructions can architecturally complete. The evaluation delay can be input to the write control and not the read control of the memory. A precharge clock of the memory can be adjusted to account for the evaluation delay. Evaluating whether both instructions can architecturally complete can include determining whether data for each instruction is located in a cache, and whether the instructions are memory access instructions.

Architecture and method for eliminating store buffers in a DSP/processor with multiple memory accesses

In a particular embodiment, a method includes discharging a first dynamic node at a first discharge circuit of a first dynamic circuit structure in response to receiving an asserted discharge signal. The first dynamic circuit structure includes the first dynamic node at a first voltage level and a first keeper circuit that is disabled when the asserted discharge signal is received. The asserted discharge signal has a second voltage level that is different from the first voltage level. A second keeper circuit of a second dynamic circuit structure is enabled responsive to discharging the first dynamic node to maintain a second dynamic node of the second dynamic circuit structure at the first voltage level.

Multi-voltage level, multi-dynamic circuit structure device

A circuit for reducing sleep state current leakage is described. The circuit includes a hardware unit selected from at least one of a latch, a flip-flop, a comparator, a multiplexer, or an adder. The hardware unit includes a first node. The hardware unit further includes a sleep enabled combinational logic coupled to the first node, wherein a value of the first node is preserved during a sleep state.

Circuits and methods for sleep state leakage current reduction

An apparatus is disclosed. In a particular embodiment, the apparatus includes a a dynamic circuit structure that includes a dynamic node coupling a precharge circuit, a discharge circuit, and a gated keeper circuit. The gated keeper circuit is enabled by a signal from a discharge delay tracking circuit.

A method of changing execution contexts is provided that includes receiving a context selection input. In a first clock phase, the method includes shifting data from a first latch element of a normal execution context to a second latch element of the normal execution context and shifting shadow data from a third latch element of a shadow execution context to a fourth latch element of the shadow execution context. In a second clock phase, the method includes shifting the shadow data of the fourth latch element of the shadow execution context into the first latch element of the normal execution context and shifting the data of the second latch element of the normal execution context into the third latch element of the shadow execution context. In a particular embodiment, the method may include receiving a test mode selection and shifting test data, such as scan test or automatic test pattern generated data, to a test output.

Method and context switch device for implementing design-for-testability functionality of latch-based register files

In a particular illustrative embodiment, a circuit device that includes first logic and second logic is disclosed. The first logic receives a clock signal and a first portion of a memory address of a memory array, decodes the first portion of the memory address, and selectively applies the clock signal to a selected group of wordline drivers associated with the memory array. The second logic decodes a second portion of the memory address and selectively activates a particular wordline driver of the selected group of wordline drivers according to the second portion of the memory address.

Dynamic word line drivers and decoders for memory arrays

In a particular embodiment, a method is disclosed that includes receiving a first sense output and a second sense output of a sense amplifier at a first tri-state device coupled to a first bus, receiving the first sense output and the second sense output of the sense amplifier at a second tri-state device coupled to a second bus, and selectively activating one of the first tri-state device and the second tri-state device to drive the first bus or the second bus in response to a bus selection input.

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Cardiff by the Sea, CA, United States of America

Jentsung Lin