Carl Zeiss Smt Gmbh

Carl Zeiss X-ray Microscopy, Inc.

Jens Timo Neumann

Thomas Korb

Eugen Foca

Christian Wojek

Johannes Ruoff

Ramani Pichumani

Dmitry Klochkov

Abhilash Srikantha

Keumsil Lee

Joaquin Correa

Philipp Huethwohl

Dirk Zeidler

Susanne Beder

Frank Schlesener

Hans-Jürgen Mann

Ulrich Matejka

Christof Riedesel

Dirk Hellweg

Joerg Zimmermann

Dirk Juergens

Hans Michael Stiepan

Wolfgang Hoegele

Amir Avishai

Christoph Hilmar Graf Vom Hagen

Alex Buxbaum

Thomas Matthew Gregorich

Jagdish Chandra Saraswatula

Raghavendra Hanumantha Nayak

Ralf Müller

Jörg Zimmermann

Dirk JÜRGENS

Semiconductor structures can be investigated, e.g., in an in-line quality check. An x-ray scattering measurement, e.g., CD-SAXS, can be used for wafer metrology. The x-ray scattering measurement can be configured based on a slice-and-imaging tomographic measurement using a dual-beam device, e.g., including a focused ion beam device and a scanning electron microscope.

Parameterizing x-ray scattering measurement using slice-and-image tomographic imaging of semiconductor structures

A method includes obtaining an image data set that depicts semiconductor components, and applying a hierarchical bricking to the image data set. In this case, the bricking includes a plurality of bricks on a plurality of hierarchical levels. The bricks on different hierarchical levels have different image element sizes of corresponding image elements.

Processing image data sets

Methods and evaluation devices for evaluating 3D data of a device under inspection are provided. A first machine learning logic detects target objects, and a second machine learning logic provides a voxel segmentation for the target objects. Based on the segmented voxels, a transformation to feature space is performed to obtain measurement results.

Methods and evaluation devices for analyzing three-dimensional data sets representing devices

A method includes obtaining at least one 2-D image dataset of semiconductor structures formed on a wafer including one or more defects during a wafer run of a wafer using a predefined fabrication process. The method also includes determining, based on at least one machine-learning algorithm trained on prior knowledge of the fabrication process and based on the at least one 2-D image dataset, one or more process deviations of the wafer run from the predefined fabrication process as a root cause of the one or more defects. A 3-D image dataset may be determined as a hidden variable.

Automated root cause analysis for defect detection during fabrication processes of semiconductor structures

A method for acquiring a 3D image of a sample structure includes acquiring a first raw 2D set of 2D images of a sample structure at a limited number of raw sample planes; calculating a 3D image of the sample structure represented by a 3D volumetric image data set; and extracting a measurement parameter from the 3D volumetric image data set. A further number of interleaving 2D image acquisitions are recorded at a further number of interleaved sample planes which do not coincide with previous acquisition sample planes. The steps 'calculating,' “extracting” and “assigning” are repeated for the further interleaving 2D set until convergence or a maximum number of 2D image acquisitions is recorded. A projection system used for such method comprises a projection light source, a rotatable sample structure holder and a spatially resolving detector. Such method can also be used to acquire virtual tomographic images of a sample.

Method to acquire a 3D image of a sample structure

The present invention relates to a method for measuring a sample with a microscope, the method comprising the steps of: measuring a tilt of the sample, correcting an orientation of the sample based on the tilt, and scanning the sample.

Method for measuring a sample and microscope implementing the method

A method, including: recording plural images of an object by scanning plural particle beams across the object and detecting signals generated by the particle beams, wherein the plural particle beams are generated by a multi-beam particle microscope; determining plural regions of interest; determining plural image regions in each of the recorded images; determining plural displacement vectors; and determining image distortions based on image data of the recorded images and the determined displacement vectors.

Method of recording an image using a particle microscope

Methods for determining metrology sites for products includes detecting corresponding objects in measurement data of one or more product samples, and aligning the detected objects are aligned. The methods also include analyzing the aligned objects, and determining metrology sites based on the analysis. Devices use such methods to determine metrology sites for products.

Method and devices for determining metrology sites

A method includes controlling a multi-scanning electron microscope, mSEM, to capture a first image of a wafer attached to a motorized handling stage while the motorized handling stage is in a first position. The first image includes at least a part of a notch of the wafer. The method also includes determining a radial axis of the wafer based on the first image, and controlling the motorized handling stage to shift the wafer along the radial axis by half a diameter of the wafer so that the motorized handling stage is in a second position. The method further includes controlling the mSEM to capture a second image of the wafer while the motorized handling stage is in the second position. The second image includes wafer structures. In addition, the method includes determining a reference position of the wafer based on a structure recognition of the wafer structures of the second image, and registering a wafer coordinate system of the wafer to a stage coordinate system of the motorized handling stage based on the reference position and the radial axis.

Multi-scanning electron microscopy for wafer alignment

An imaging optical unit serves within a metrology system for examining a lithography mask. The lithography mask can be arranged in an object field of the imaging optical unit. The object field is defined by two mutually perpendicular object field coordinates. The imaging optical unit has an aperture stop of which the aspect ratio in the direction of the two object field coordinates differs from 1. This results in an imaging optical unit which can be used for the examination of lithography masks that are designed for projection exposure with an anamorphic projection optical unit.

Imaging optical unit for a metrology system for examining a lithography mask

A method of reducing image placement errors in a microlithographic projection exposure apparatus includes providing a mask, a light sensitive layer and a microlithographic projection exposure apparatus which images features of the mask onto the light sensitive surface using projection light. Subsequently, image placement errors associated with an image of the features formed on the light sensitive surface are determined either by simulation or metrologically. Then an input state of polarization of the projection light is changed to an elliptical output state of polarization which is selected such that the image placement errors are reduced.

Optical system of a microlithographic projection exposure apparatus and method of reducing image placement errors

A method for measuring an optical symmetry property on a microlithographic projection exposure apparatus () together with a microlithographic projection exposure apparatus and an associated microlithographic measurement mask are disclosed. The method includes arranging at least one measurement structure () in an exposure beam path () of the projection exposure apparatus, wherein the measurement structure includes a pinhole stop () and a diffraction grating () arranged within an aperture () of the pinhole stop. Furthermore, the method includes measuring an intensity of a diffracted radiation generated at the diffraction grating () after interaction of the radiation with at least one optical element () of the projection exposure apparatus.

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Aalen, Germany

Jens Timo Neumann