Siemens Aktiengesellschaft

Jens P Stengl

Jeno Tihanyi

Helmut Strack

Ludwig Leipold

Peter Huber

Semiconductor component, including a semiconductor body having an edge, a surface, a substrate of a first given conductivity type, at least one zone being embedded in a planar manner in the substrate at the surface and being of a second conductivity type opposite the first given type, and insulating layer disposed on the surface, an electrode being in contact with the at least one zone, a channel stopper disposed on the insulating layer outside the at least one zone and in vicinity of the edge of the semiconductor body, the channel stopper being electrically connected to the substrate, and a field plate beind disposed on the insulating layer between the at least one zone and the channel stopper and being electrically connected to the at least one zone, the channel stopper being disposed at an increasing distance from the edge and the surface of the semiconductor body, as seen in direction toward the at least one zone.

Planar semiconductor component with stepped channel stopper electrode

Field effect transistor, including negatively and positively doped zones in the form of a substrate of a given first conductivity type having a surface, a first zone of a second conductivity type being opposite the first given conductivity type and embedded planar in the substrate, a second zone of the first conductivity type being embedded planar in the first zone, a first p-n junction disposed between the first and second zones, a second p-n junction disposed between the first zone and the substrate, both of the p-n junctions emerging to the surface of the substrate, at least one channel zone disposed between the p-n junctions, and a gate electrode at least covering the channel zone and being insulated from the surface of the substrate, at least the second p-n junction at least in the vicinity of the channel zone adjoining a given negatively doped zone at the surface of the substrate at an angle of at most 180.degree. to the given negatively doped zone.

Field effect transistor

Controlled semiconductor switch with a semiconductor body containing a thyristor structure having a first zone of first conductivity type embedded in coplanar relationship in a second zone of second conductivity type; also containing a third zone of the first conductivity type and a fourth zone of the second conductivity type; and further containing an MIS-FET integrated into the semiconductor body and having a source zone of the first conductivity type embedded in coplanar relationship in a zone of the second conductivity type; an insulating layer disposed on the surface of the semiconductor body, a control electrode lying on the insulating layer and covering a first channel zone operatively associated with the FET; and a cathode electrode on the semiconductor body, including the features that the zone of the second conductivity type of the MIS-FET is embedded in the third zone in coplanar relationship therewith and forms the first channel zone at the surface of the semiconductor body; the second zone of the thyristor structure is embedded in the third zone in coplanar relationship therewith and forms a second channel zone at the surface of the semiconductor body; the third zone extends to the surface of the semiconductor body between the two channel zones; the control electrode also covers the second channel zone and the part of the third zone extending to the surface of the semiconductor body; and the cathode electrode is in contact with the source zone of the MIS-FET.

FET Controlled thyristor

Light-controlled thyristor, including a semiconductor body having a surface, a first zone being of a given conduction type and having a given depth and being adjacent to the surface of the body, a second zone of the given conduction type having a region intended for exposure, a third zone of a conduction type opposite to the given type being disposed under the first and second zones and having a part thereof emerging to the surface of the body between the first and second zones and having a depression formed therein containing the region intended for exposure, electrodes contacting the first and second zones, said second zone having a first and a second subzone, the first subzone having the given depth and being disposed between the part of the third zone emerging to the surface of the body and the depression, the first subzone being in contact with one of the electrodes, the second subzone being the region intended for exposure in the depression and being formed by implanted ions, the second subzone being disposed parallel to the surface of the body and being electrically connected to the first subzone.

Growing community of inventors

Munich, Germany

Jens P Stengl