Globalfoundries Inc.

Globalfoundries Singapore Pte. Ltd.

Forderverein Institut Fur Medizintechnik Dresden E.v.

Jens Oswald

Juan Boon Tan

Wei Liu

Wanbing Yi

Frank G Kuechenmeister

Lei Wang

Shunqiang Gong

Jeffrey C Lam

Rahul Agarwal

Christian Klewer

Soon Leng Tan

Jurgen Joswig

Steffen Seifert

Sheng Feng Lu

A method of forming and testing an interposer includes forming vias in a semiconductor material of a wafer having a front side and a back side. The method further includes disposing an electrically conductive layer on the front side of the wafer such that the layer is electrically connected to the vias. The method also includes forming electrically conductive pads on the front side of the wafer, wherein each electrically conductive pad is electrically connected to the electrically conductive layer. The method further includes forming electrically conductive bumps on the back side of the wafer, wherein each electrically conductive bump is electrically connected to at least one via. The method also includes testing electrical connectivity from a first bump to a second bump of the electrically conductive bumps.

Interposer and methods of forming and testing an interposer

Articles including bonded metal structures and methods of preparing the same are provided herein. In an embodiment, a method of preparing an article that includes bonded metal structures includes providing a first substrate. A first metal structure and a second metal structure are formed on the first substrate. The first metal structure and the second metal structure each include an exposed contact surface. A bond mask is formed over the contact surface of the first metal structure. A second substrate is bonded to the first substrate through the exposed contact surface of the second metal structure. The bond mask remains disposed over the exposed contact surface of the second metal structure during bonding of the second substrate to the first substrate. A wire is bonded to the exposed contact surface of the first metal structure.

Articles including bonded metal structures and methods of preparing the same

Memory devices and methods for forming the device are disclosed. The device includes a substrate having an array surface and a non-array surface and a memory array having a plurality of memory cells interconnected by first conductors in a first direction and second conductors in a second direction. The memory array is disposed on the array surface of the substrate. The device further includes through silicon via (TSV) contacts disposed in the substrate. The TSV contacts extend from the array surface to the non-array surface, enabling electrical connections to the array from the non-array surface.

Non-volatile memory device with TSI/TSV application

The invention relates to a device for measuring and/or detecting the internal pressure of lumens or flexible tubes. The inventive device has a cage which surrounds the outer wall of the lumen or the tube, and at least one sensor for measuring the force exerted on said cage by the internal pressure.

Device for measuring and/or detecting the internal pressure of lumens of flexible tubes

Growing community of inventors

Dresden, Germany

Jens Oswald