Infineon Technologies Ag

Jens Oetjen

Franz Jost

Markus Dinkel

Stefan Mieslinger

Liu Chen

Toni Salminen

Giuliano Angelo Babulano

Thorsten Meyer

Rainer Markus Schaller

Martin Gruber

Ralf Otremba

Stefan Macheiner

Christian Musshoff

Josef Hoglauer

An interconnect module includes a metal clip having a first end section, a second end section and a middle section extending between the first and the second end sections. The first end section is configured for external attachment to a bare semiconductor die or packaged semiconductor die attached to a carrier or to a metal region of the carrier. The second end section is configured for external attachment to a different metal region of the carrier or to a different semiconductor die or packaged semiconductor die attached to the carrier. The module further includes a magnetic field sensor secured to the metal clip. The magnetic field sensor is operable to sense a magnetic field produced by current flowing through the metal clip. The interconnect module can be used to form a direct electrical connection between components and/or metal regions of a carrier to which the module is attached.

Multi-functional interconnect module and carrier with multi-functional interconnect module attached thereto

A solder pad includes a surface. A tin layer is arranged on the surface. At least one out of a bismuth layer, an antimony layer and a nickel layer is arranged on the tin layer.

Enhanced solder pad

A power semiconductor package includes a substrate having a plurality of metal leads, a power semiconductor die attached to a first one of the leads and a magnetic field sensor integrated in the same power semiconductor package as the power semiconductor die and positioned in close proximity to a current pathway of the power semiconductor die. The magnetic field sensor is operable to generate a signal in response to a magnetic field produced by current flowing in the current pathway, the magnitude of the signal being proportional to the amount of current flowing in the current pathway.

Power package with integrated magnetic field sensor

A semiconductor package includes a semiconductor die attached to a substrate and a magnetic field sensor included as part of the same semiconductor package as the semiconductor die and positioned in close proximity to a current pathway of the semiconductor die so that the magnetic field sensor can sense a magnetic field produced by current flowing in the current pathway. The magnetic field sensor includes a first magnetic field sensing component galvanically isolated from the current pathway and positioned so that a magnetic field produced by current flowing in the current pathway impinges on the first magnetic field sensing component in a first direction. The magnetic field sensor also includes a second magnetic field sensing component galvanically isolated from the current pathway and positioned so that the magnetic field impinges on the second magnetic field sensing component in a second direction different than the first direction.

Semiconductor package with integrated magnetic field sensor

A method for testing a contact region of a semiconductor module having a circuit arrangement is disclosed. In one embodiment, the semiconductor module is heated by an electrical heating current flow and the electrical and/or thermal quality of a plurality of contacts provided in the contact region is determined in the process from a temperature-dependent measurement quantity. The heating current flow is formed by a plurality of heating current pulses. The application of the heating current pulses leads to different phases of the measurement quantity. The different phases are assigned to the different contacts and evaluated correspondingly for determining the electrical and/or thermal quality of the contacts.

Method for testing a contact region of a semiconductor module

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Ottenhofen, Germany

Jens Oetjen