Osram Opto Semiconductors Gmbh

Osram Oled Gmbh

Jens Müller

Alfred Lell

Christoph Eichler

Alexander F Pfeuffer

Sven Gerhard

Fabian Kopp

Andreas Löffler

Sophia Huppmann

Uwe Strauβ

Johannes Saric

Christian Kurz

Benjamin Reuters

Andrea Winnerl

In an embodiment, the optoelectronic semiconductor component () comprises a semiconductor layer sequence () with an active zone () for generating a radiation. On an bottom side () of the semiconductor layer sequence () there is an electrically insulating separation layer () with several openings (). An adhesion-promoting layer () is located next to the openings () on a side of the separation layer () facing away from the semiconductor layer sequence (). A continuous metallization layer () is located on a side of the adhesion-promoting layer () facing away from the semiconductor layer sequence (). The semiconductor layer sequence () is electrically contacted in the openings () directly by the metallization layer (). The metallization layer () and the openings () are spaced from the active zone () in the direction perpendicular to the separation layer ().

Optoelectronic semiconductor component and method of producing an optoelectronic semiconductor component

The application concerns a method of manufacturing optoelectronic semiconductor components () comprising the following steps:

Method for producing optoelectric semiconductor components, and optoelectronic semiconductor component

An optoelectronic device and a method are disclosed. In an embodiment an optoelectronic device includes a semiconductor body having a layer sequence with an active region configured to generate radiation, a first dielectric layer arranged on the layer sequence having a plurality of first areas and a second area, a first contact via in each area of the plurality of first areas for contacting a first side of the active region, a second contact via in the second area for contacting a second side of the active region and a conductive layer comprising a plurality of first regions and a second region surrounding the plurality of first regions and electrically isolated from the plurality of first regions, the conductive layer having a substantially planar surface and being arranged planar onto the plurality of first areas and the second area such that each of the plurality of first regions of the conductive layer is in contact with the first contact via in the respective area of the plurality of first areas and the second region of the conductive layer is in contact with the second contact via of the first dielectric layer.

Optoelectronic device and method

An arrangement includes a confining layer, a metallization layer and a semiconductor component, wherein the metallization layer is arranged on the semiconductor component, and the confining layer is arranged on the metallization layer, the confining layer spatially establishes a reservoir for the marker material at least partially in a defined manner, the confining layer and the metallization layer include an identical material, and the marker material is arranged in the reservoir of the arrangement.

Arrangement for spatially limiting a reservoir for a marker material

A semiconductor laser includes a main body and a ridge structure arranged on the main body, the ridge structure being oriented along a longitudinal axis above an active zone, wherein the ridge structure has a first width, the ridge structure has two opposite end faces along the longitudinal axis, adjacent to at least one end face, the ridge structure has an end section arranged on one side with respect to a center axis of the ridge structure such that the ridge structure is widened on one side adjacent to the end face, and on an opposite side of the ridge structure relative to the end section a fracture trench is arranged adjacent to the end face and at a distance from the ridge structure in a surface of the main body.

Semiconductor laser having a ridge structure widened on one side

A semiconductor strip laser and a semiconductor component are disclosed. In embodiments the laser includes a first semiconductor region of a first conductivity type of a semiconductor body, a second semiconductor region of a second different conductivity type of the semiconductor body, at least one active zone of the semiconductor body configured to generate laser radiation between the first and second semiconductor regions. The laser further includes a strip waveguide formed at least in the second semiconductor region and providing a one-dimensional wave guidance along a waveguide direction of the laser radiation generated in the active zone during operation, a first electric contact on the first semiconductor region, a second electric contact on the second semiconductor region and at least one heat spreader dimensionally stably connected to the semiconductor body at least up to a temperature of 220&#xb0; C., and having an average thermal conductivity of at least 50 W/m&#xb7;K.

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Wuppertal, Germany

Jens Müller