Angewandte Solarenergie-ase Gmbh

Rwe Schott Solar Gmbh

Schott Solar Ag

Jens Moschner

Thomas Lauinger

Ingo Schwirtlich

Manuel Kanne

Guido Halbach

Richard Auer

Hanno Paschke

Armin Aberle

The invention relates to a method for manufacture of a semiconductor component by the formation of a hydrogenous layer containing silicon on a substrate comprising or containing silicon such as a wafer or film. In order to achieve a good surface and volume passivation, it is proposed that during formation of the siliceous layer in the form of SiN O with 0<x&lE;1.5 and 0&lE;y&lE;2 one or more catalytically acting dopants are selectively added into the layer which release hydrogen from the SiN O layer. The concentration C of the dopants is 1&times;10 cm &lE;C&lE;10 cm .

Method for manufacture of a solar cell

The invention relates to a process for continuous treatment of objects in a processing unit, where the objects are moved along a conveyor track passing through the processing unit by a first linear-action conveyor device performing a back-and-forward movement and where the objects are supplied to/removed from the conveyor track by a transfer device. To permit with measures of simple design a continuous treatment without parasitic depositions or high temperatures impairing the process sequence, it is proposed that the objects be arranged on supports which are lined up on the conveyor track by at least two first linear-action conveying devices performing a back-and-forward movement and are then conveyed continuously through the processing unit, where the lining up and subsequent continuous conveying of the supports is performed such that one of the first conveying devices lines up a support transferred to the conveyor track with those supports already on the conveyor track while the other first conveying device continuously conveys the previously lined-up supports.

Process and arrangement for continuous treatment of objects

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Zeven, Germany

Jens Moschner