International Business Machines Corporation

Ams International Ag

Ams Ag

Globalfoundries Inc.

Jens Hofrichter

Lukas Czornomaz

Mirja Richter

Bert Jan Offrein

Folkert Horst

Antonio La Porta

Heike E Riel

Nikolaj Moll

Ibrahim Murat Soganci

Thomas Troxler

Josef Pertl

Marwan H Khater

Thomas J Brunschwiler

Edward William Kiewra

Jean Fompeyrine

Guy Meynants

Jessie Carrigan Rosenberg

John J Ellis-Monaghan

Steven M Shank

Tymon Barwicz

Franz Schrank

Jochen Kraft

Colin Steele

William M J Green

Daniel S Jubin

Thomas Froehlich

Andreas Fitzi

Joerg Siegert

Jan Enenkel

Felix Holzner

Gerald Meinhardt

Gerhard Eilmsteiner

Philip Paul

Ewald Wachmann

Martin Sagmeister

Michael Leitner

Dominik Hollinger

Thomas Mueller

Corneliu-Mihai Tobescu

Goran Stojanovic

Thomas Stockmeier

Deborah Morecroft

Desislava Oppel

Catalin Lazar

An apparatus for sound detection, sound localization and beam forming comprises a display and a plurality of microphone stacks, wherein the display surrounds each microphone stack in lateral directions. The apparatus further comprises a plurality of elastic connectors, wherein each elastic connector surrounds one respective microphone stack in lateral direction and mechanically connects the respective microphone stack with the display. Each microphone stack further comprises a microelectromechanical transducer array, the transducer array comprising a plurality of membranes, in particular nano-membranes, and corresponding integrated back-volumes, the back-volumes being arranged under the membranes. An optical reading device is configured to separately detect the displacement of each membrane.

Apparatus for sound detection, sound localization and beam forming and method of producing such apparatus

An electronic sensing device includes a display having a display surface and a plurality of micro light emitters configured to emit light for forming a display image on the display surface. A plurality of micro photodetectors is configured to detect light conditions at the display surface. A transceiver circuit is configured to drive the micro light emitters to emit light, drive the micro photodetectors to detect light and generate photo signals based on the detected light, coordinate the driving of the micro light emitters and of the micro photodetectors, and process the photo signals according to at least one of a list of sensing modes. The plurality of micro light emitters and the plurality of micro photodetectors are arranged on a surface of a display substrate.

Electronic sensing device and sensing method

The invention relates to an X-ray detector component comprising an X-ray detector chip made from a silicon substrate and comprising charge collecting electrodes. The X-ray detector chip is suitable for providing an X-ray-dependent current at the charge collecting electrodes. The X-ray detector component further comprises a CMOS read-out circuit chip comprising connection electrodes. The X-ray detector chip and the CMOS read-out circuit chip are mechanically and electrically connected in such a manner that the charge collecting electrodes and the connection electrodes are electrically connected. The invention further relates to an X-ray detection module, an imaging device and a method for manufacturing an X-ray detector component.

X-ray detector component, X-ray detection module, imaging device and method for manufacturing an X-ray detector component

A display includes a display substrate having an active display area including a plurality of first display subpixels. A transceiver circuit is arranged to drive the display in a first mode of operation or in a second mode of operation. The first display subpixels include micro light-emitting diodes and/or resonant-cavity light emitting devices. In the first mode of operation, the transceiver circuit provides a forward bias to the first display subpixels, such that the first display subpixels are operable to emit light. In the second mode of operation, the transceiver circuit provides a reverse bias to the first display subpixels, such that the first display subpixels are operable to detect light.

Display with sensing and detection functionality

The package comprises a carrier, an electronic device arranged on the carrier, a shield arranged on the electronic device on a side facing away from the carrier, and an absorber film comprising nanomaterial applied on or above the shield.

Radiation-hardened package for an electronic device

The semiconductor device comprises a substrate of semiconductor material having a main surface, an integrated circuit in the substrate, a photodetector element or array of photodetector elements arranged at or above the main surface, and at least one nanomaterial film arranged above the main surface. At least part of the nanomaterial film has a scintillating property. The method of production includes the use of a solvent to apply the nanomaterial film, in particular by inject printing, by silk-screen printing, by spin coating or by spray coating.

Semiconductor device for indirect detection of electromagnetic radiation and method of production

The assembly comprises a semiconductor device with an active-pixel array, a readout circuit chip or plurality of readout circuit chips mounted outside the active-pixel array, the readout circuit chip or plurality of readout circuit chips being configured to read out voltages or currents provided by the active-pixel array, and electric connections between the active-pixel array and the readout circuit chip or plurality of readout circuit chips.

Assembly for detecting electromagnetic radiation and method of producing an assembly for detecting electromagnetic radiation

The photodiode device comprises a substrate () of semiconductor material with a main surface (), a plurality of doped wells () of a first type of conductivity, which are spaced apart at the main surface (), and a guard ring () comprising a doped region of a second type of conductivity, which is opposite to the first type of conductivity. The guard ring () surrounds an area of the main surface () including the plurality of doped wells () without dividing this area. Conductor tracks () are electrically connected with the doped wells (), which are thus interconnected, and further conductor tracks () are electrically connected with a region of the second type of conductivity. A doped surface region () of the second type of conductivity is present at the main surface () and covers the entire area between the guard ring () and the doped wells ().

Radiation-hard high-speed photodiode device

A surface treatment solution includes a fluoride source; a first solvent; and a water transforming agent to transform water produced during wafer surface treatment into a second solvent, which can be the same as, or different from, the first solvent. The solution can be used, for example, in surface preparation for wafers having a backend including an electrical interconnect that includes aluminum or an aluminum alloy.

Hybrid wafer-to-wafer bonding and methods of surface preparation for wafers comprising an aluminum metalization

The photodetector device comprises a substrate () of semiconductor material, a sensor region () in the substrate, a plurality of grid elements () arranged at a distance (d) from one another above the sensor region, the grid elements having a refractive index, a region of lower refractive index (), the grid elements being arranged on the region of lower refractive index, and a further region of lower refractive index () covering the grid elements.

Photodetector device with integrated high-contrast grating polarizer

A top surface of a substrate is provided with a detection element for detecting electromagnetic radiation. A refractive element is formed by a portion of a cover element, which is attached to the substrate, so that the refractive element is arranged facing the detection element. The refractive element may be arranged within a recess of the cover element, so that a cavity is formed between the detection element and the refraction element.

Optoelectronic device with a refractive element and a method of producing such an optoelectronic device

Embodiments are directed to a method of forming an optical coupler system. The method includes forming at least one waveguide over a substrate, and forming a sacrificial optical coupler in a first region over the substrate. The method further includes configuring the sacrificial optical coupler to couple optical signals to or from the at least one waveguide, and forming a v-groove in the first region over the substrate, wherein forming the v-groove includes removing the sacrificial optical coupler from the first region.

Sacrificial grating coupler for testing v-grooved integrated circuits

The present invention is directed to a photonic circuit device for optical gain measurement, including: a substrate with a photonic circuit; an active gain section; at least two light couplers arranged such that at least a part of the active gain section is between the light couplers; and a partial reflector arranged to reflect light propagating along the same direction back to a center of the gain section, and wherein the device does not include any other reflector opposite to the partial reflector with respect to the active gain section and configured to reflect light back to the center of the gain section. The present invention is further directed to related gain measurement methods.

Photonic circuit device with on-chip optical gain measurement structures

A semiconductor structure and a method for manufacturing the semiconductor structure are provided. The semiconductor structure includes a processed semiconductor substrate. The processed semiconductor substrate includes active electronic components. The semiconductor structure also includes a dielectric layer that covers, at least partially, the processed semiconductor substrate. An interface layer that is suitable for growing optically active material on the interface layer is bonded to the dielectric layer. An optical gain layer and the processed semiconductor substrate are connected through the dielectric layer by electric and/or optical contacts.

Semiconductor structure and method for manufacturing a semiconductor structure

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Gattikon, Switzerland

Jens Hofrichter