Robert Boschgmbh

Jens Frey

Jochen Reinmuth

Heribert Weber

Johannes Classen

Eckhard Graf

Christoph Schelling

Frank Fischer

Burkhard Kuhlmann

Daniel Christoph Meisel

Joerg Hauer

Julian Gonska

Udo Bischof

Christoph Lang

Reinhard Neul

Axel Franke

Jochen Franz

Udo-Martin Gomez

Wolfram Bauer

Arnd Kaelberer

Christian Doering

Rainer Willig

Achim Breitling

Torsten Kramer

Mawuli Ametowobla

Patrick Wellner

Thomas Mayer

Yvonne Bergmann

Hartmut Kueppers

Neil A Davies

Dieter Maurer

Roman Schlosser

Hubert Benzel

Mirko Hattass

Frieder Haag

Silvia Kronmueller

Thorsten Pannek

Torsten Ohms

Ulf Wilhelm

Thorsten Balslink

Frank Reichenbach

Ralf Reichenbach

Timo Schary

Mathias Bruendel

Daniel Meisel

Julia Amthor

Philip Kappe

Antoine Puygranier

Carsten Geckeler

Lutz Rauscher

Martin Wrede

Kathrin Gutsche

Rolf Speicher

Holger Rumpf

Juergen Fritz

Kurt-Ulrich Ritzau

A micromechanical device that includes a silicon substrate with an overlying oxide layer and with a micromechanical functional layer lying above same, which extend in parallel to a main extension plane, a cavity being formed at least in the micromechanical functional layer and in the oxide layer. An access channel is formed in the oxide layer and/or in the micromechanical functional layer which, starting from the cavity, extends in parallel to the main extension plane and in the process extends in a projection direction, as viewed perpendicularly to the main extension plane, all the way into an access area outside the cavity. A method for manufacturing a micromechanical device is also described.

Micromechanical device and method for manufacturing a micromechanical device

A method for manufacturing a micromechanical component including a substrate and a cap which is joined to the substrate, and, together with the substrate, encloses a first cavity, a first pressure prevailing and a first gas mixture having a first chemical composition being enclosed in the first cavity. In a first step, an access opening connecting the first cavity to surroundings of the micromechanical component being formed in the substrate or in the cap. In a second step, the first pressure and/or the first chemical composition in the first cavity being set. In a third step, the access opening being sealed by introducing energy or heat into an absorbing portion of the substrate or the cap with the aid of a laser, a reversible getter for further setting the first pressure and/or the first chemical composition being introduced into the first cavity chronologically prior to the third step.

MEMS component having two different internal pressures

A method for manufacturing a micromechanical component including a substrate and a cap connected to the substrate and together with the substrate enclosing a first cavity, a first pressure prevailing and a first gas mixture with a first chemical composition being enclosed in the first cavity. An access opening, connecting the first cavity to surroundings of the micromechanical component, is formed in the substrate or the cap. The first pressure and/or the first chemical composition is adjusted in the first cavity. The access opening is sealed by introducing energy and heat into an absorbing part of the substrate or cap with the aid of a laser. A recess is formed in a surface of the substrate or of the cap facing away from the first cavity in the area of the access opening for accommodating a material area of the substrate or the cap converted into a liquid aggregate state.

Structures and process for preventing a projection of the laser resealing structure beyond the wafer surface

A sensor unit including a first semiconductor component and a second semiconductor component, the first semiconductor component including a first substrate and a sensor structure. The second semiconductor component includes a second substrate, the first and second semiconductor components being connected to each other with the aid of a wafer connection, the sensor unit having a decoupling structure, which is configured in such a way that the sensor structure is decoupled thermally and/or mechanically from the second semiconductor component.

Sensor unit including a decoupling structure and manufacturing method therefor

A method for manufacturing a micromechanical component including a substrate and a cap, which is connected to the substrate and, together with the substrate, encloses a cavity, a pressure prevailing and gas mixture having a chemical composition being enclosed in the cavity. An access opening connecting the to surroundings of the micromechanical component is formed in the substrate or in the cap. The pressure and/or chemical composition are/is adjusted in the cavity. The access opening is sealed by introducing energy or heat into an absorbing part of the substrate or of the cap with the aid of a laser. A layer is deposited on or grown on a surface of the substrate or of the cap in the area of the access opening for mixing with a material area of the substrate or of the cap, which is converted into a liquid aggregate state.

Laser reseal including an additional layer and alloy formation

A micromechanical component is provided having a substrate having a main plane of extension, a first electrode extending mainly along a first plane in planar fashion, a second electrode extending mainly along a second plane in planar fashion, and a third electrode extending mainly along a third plane in planar fashion, the first, second, and third plane being oriented essentially parallel to the main plane of extension and being situated one over the other at a distance from one another along a normal direction that is essentially perpendicular to the main plane of extension, the micromechanical component having a deflectable mass element, the mass element being capable of being deflected both essentially parallel and also essentially perpendicular to the main plane of extension, the second electrode being connected immovably to the mass element, the second electrode having, in a rest position, a first region of overlap with the first electrode along a projection direction essentially parallel to the normal direction, and having a second region of overlap with the third electrode along a projection direction parallel to the projection direction, the mass element extending in planar fashion mainly along the third plane, the mass element having a recess that extends completely through the mass element, extending in planar fashion along the third plane and parallel to the normal direction, the third electrode being situated at least partly in the recess.

Micromechanical component and method for producing a micromechanical component

A micromechanical sensor device, having a first unhoused sensor unit, and at least one second unhoused sensor unit, the sensor units being functionally connected to one another, the sensor units being essentially vertically configured one over the other so that a sensor unit having a larger footprint completely covers a sensor unit having a smaller footprint.

Micromechanical sensor device

A micromechanical component includes a first space in which a first sensor is situated and a second space in which a second sensor is situated, different pressures prevailing in the first and second spaces, one of the two spaces extending via a third space to a first lattice structure which is situated in an edge region of the component and is essentially hermetically sealed.

Micromechanical component

Measures are provided which are used for stabilizing the substructure of the connecting areas of ASIC elements. These measures relate to ASIC elements including an ASIC substrate, into which electrical circuit functions are integrated, and including an ASIC layer structure on the ASIC substrate, which includes multiple wiring levels for the circuit functions, which are separated from one another by insulation layers and are interconnected via metallic plugs. At least one connecting area for placing wire bonds or for wafer bonding is implemented in at least one of the uppermost wiring levels. At least one chain of metallic plugs arranged vertically in a direct line is implemented in the ASIC layer structure below the connecting area, which extends from the uppermost wiring level up to the ASIC substrate or oxide trenches introduced therein.

ASIC element, in particular as a component of a vertically integrated hybrid component

To implement cavities having different internal pressures in joining two semiconductor elements, at least one of the two element surfaces to be joined is structured, so that at least one circumferential bonding frame area is recessed or elevated in comparison with at least one other circumferential bonding frame area. At least one connecting layer should then be applied to this structured element surface and at least two circumferential bonding frames should be structured out of this connecting layer on different surface levels of the element surface. The topography created in the element surface permits sequential bonding in which multiple cavities between the two elements may be successively hermetically sealed, so that a defined internal pressure prevails in each of the cavities.

Component including two semiconductor elements, between which at least two hermetically sealed cavities are formed and method for establishing a corresponding bonding connection between two semiconductor elements

A vertically integrated hybrid component is implemented in the form of a wafer level package including: at least two element substrates assembled one above the other; a molded upper sealing layer made of an electrically insulating casting; and an external electrical contacting of the component being implemented on the top side via at least one contact stamp which is embedded in the sealing layer so that (i) its lower end is connected to a wiring level of an element substrate and (ii) its upper end is exposed in the surface of the sealing layer.

Component in the form of a wafer level package and method for manufacturing same

A method for manufacturing a micromechanical component includes the following sequential steps: a first material layer including a first joining partner being applied to a first wafer; a second material layer including a second joining partner being applied to a second wafer; a micromechanical structure being created in the first wafer by gas phase etching with the aid of a gaseous etching medium which is applied to the first joining partner; the first and second wafers being joined in such a way that they are in contact at least in some areas; and the first and second joining partners being heated to be integrally joined to form a connecting layer, a eutectic joining material being formed in the connecting layer from the first joining partner and the second joining partner.

Method for manufacturing a micromechanical component

A component has at least one MEMS element and at least one cap made of a semiconductor material. The cap, in addition to its mechanical function as a terminus of a cavity and protection of the micromechanical structure, is provided with an electrical functionality. The micromechanical structure of the MEMS element of the component is situated in a cavity between a carrier and the cap, and includes at least one structural element which is deflectable out of the component plane within the cavity. The cap includes at least one section extending over the entire thickness of the cap, which is electrically insulated from the adjoining semiconductor material in such a way that it may be electrically contacted independently from the remaining sections of the cap.

Hybrid integrated component

In an ASIC element, vias are integrated into the CMOS processing of an ASIC substrate. The ASIC element includes an active front side in which the circuit functions are implemented. The at least one via is intended to establish an electrical connection between the active front side and the rear side of the element. The front side of the via is defined by at least one front-side trench which is completely filled, and the rear side is defined by at least one rear-side trench which is not completely filled. The rear-side trench opens into the filled front-side trench.

ASIC element including a via

A method for bonding two silicon substrates and a corresponding system of two silicon substrates. The method includes: providing first and second silicon substrates; depositing a first bonding layer of pure aluminum or of aluminum-copper having a copper component between 0.1 and 5% on a first bonding surface of the first silicon substrate; depositing a second bonding layer of germanium above the first bonding surface or above a second bonding surface of the second silicon substrate; subsequently joining the first and second silicon substrates, so that the first and the second bonding surfaces lie opposite each other; and implementing a thermal treatment step to form an eutectic bonding layer of aluminum-germanium or containing aluminum-germanium as the main component, between the first silicon substrate and the second silicon substrate, spikes which contain aluminum as a minimum and extend into the first silicon substrate, forming at least on the first bonding surface.

Method for bonding two silicon substrates, and a correspondeing system of two silicon substrates

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Filderstadt, Germany

Jens Frey