Flexenable Limited

Jens Dienelt

Ricardo Pablo Mikalo

Stephan Riedel

Jan Jongman

Anja Wellner

Karsten Neumann

A technique comprising: providing a stack of layers defining at least (a) source and drain electrodes, (b) gate electrode, and (c) semiconductor channel of at least one transistor; depositing one or more organic insulating layers over the stack; removing at least part of the stack in one or more selected regions by an ablation technique; depositing conductor material over the stack in at least the one or more ablated regions and one or more border regions immediately surrounding a respective ablated region; and depositing inorganic insulating material over the stack at least in the ablated regions and the border regions to cover the ablated regions and make direct contact with said conductor material in said one or more border regions all around the respective ablated region.

Protecting transistor elements against degrading species

A method, comprising: generating a vapor of a material from a source of said material comprising a plurality of separate solid pieces of said material supported on a surface of a base in a configuration in which said plurality of solid pieces of said target material are arranged at two or more levels to cover the whole of said surface of said base while providing a gap between adjacent pieces at the same level; and depositing said material from said vapor onto a substrate.

Growing community of inventors

Radebeul, Germany

Jens Dienelt