Asml Netherlands B.v.

Jens Arno Steinhoff

Erik Roelof Loopstra

Vadim Yevgenyevich Banine

Richard Joseph Bruls

Andrei Mikhailovich Yakunin

Luigi Scaccabarozzi

Hendrik Antony Johannes Neerhof

Adrianus Johannes Maria Van Dijk

A contaminant trap is used in an EUV radiation source apparatus. An EUV radiation beam is generated and focused through a low pressure gaseous atmosphere into a virtual source point. The EUV radiation creates a plasma in the low pressure hydrogen atmosphere through which it passes. A contaminant trap including electrodes is located in or around radiation beam as it approaches the virtual source point. A DC biasing source is connected to the electrodes to create an electric field oriented to deflect out of the beam path contaminant particles that have been negatively charged by the plasma. Additional RF electrodes and/or an ionizer enhance the plasma to increase the charging of the particles. The deflecting electrodes can be operated with RF bias for a short time, to ensure dissipation of the enhanced plasma.

Radiation source apparatus, lithographic apparatus, method of generating and delivering radiation and method for manufacturing a device

A gas contamination sensor includes an ion source configured to generate a beam of ions from a sample of gas to be tested, and first and second ion detectors, each positioned to receive ions from the beam of ions that are deflected by different extents. The first ion detector is configured to receive ions generated from a primary gas in the gas being tested, and the second ion detector is configured to receive ions that are generated from the contaminant gas within the sample being tested.

Gas contamination sensor, lithographic apparatus, method of determining a level of contaminant gas and device manufacturing method

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Straelen, Germany

Jens Arno Steinhoff