Applied Materials, Inc.

Other

Candescent Technologies Corporation

Canon Kabushiki Kaisha

Sony Corporation

Applied Material, Inc.

Jennifer Y Sun

Biraja Prasad Kanungo

Vahid Firouzdor

Ren-Guan Duan

Kenneth S Collins

Li Xu

Senh Thach

Xiaowei Wu

Dmitry Lubomirsky

David Fenwick

Tom K Cho

Jie Yuan

Ying Di Zhang

Sumanth Banda

Kartik Ramaswamy

Michael Robert Rice

Kallol Bera

Guodong Zhan

Andrew Nguyen

Douglas A Buchberger, Jr

Hiroji Hanawa

James D Carducci

Shahid Rauf

James P Cruse

Vedapuram S Achutharaman

Hamid Noorbakhsh

Prerna Sonthalia Goradia

Steven C Shannon

Matthew L Miller

Konstantin Makhratchev

Walter R Merry

Lawrence Wong

Yixing Lin

Hong Shih

Theodore S Fahlen

Martin Jeffrey Salinas

Geetika Bajaj

Nianci Han

Hong Peng Wang

Jared Ahmad Lee

Zheng John Ye

Jason C Della Rosa

Vladimir Knyazik

Christopher J Spindt

Thorsten B Lill

Ananda H Kumar

Michael D Willwerth

Xikun Wang

Brian T West

Robert M Duboc

Kaushal Gangakhedkar

Benjamin Schwarz

Kollengode S Narayanan

Paul N Ludwig

George B Hopple

Xing Lin

Srinivas D Nemani

Mei Yin Chang

Hou Tee Ng

Yan Ye

Nag B Patibandla

Philip Allan Kraus

Mark Joseph Saly

Ganesh Balasubramanian

Anantha K Subramani

Soonam Park

Avgerinos V Gelatos

Shamouil Shamouilian

Thomas B Brezoczky

Dien-Yeh Wu

Jay D Pinson, Ii

Samer Banna

Diana Xiaobing Ma

Xinhai Han

Ming Xu

Ajit Balakrishna

Simon Yavelberg

Lin Zhang

Canfeng Lai

Toan Q Tran

Anisul Haque Khan

Lee Luo

Swaminathan T Srinivasan

Imad Yousif

Gerald Zheyao Yin

Thanh Ngoc Pham

Claes H Bjorkman

Robert W Wu

David Palagashvili

Leonard Michael Tedeschi

Steven E Babayan

Sushant Suresh Koshti

Lei Zhou

Shuran Sheng

Zhijun Jiang

Yaoling Pan

Takashi Kuratomi

Kasiraman Krishnan

David L Morris

Patrick John Tae

Certain embodiments of the present disclosure relate to methods of forming coated articles. In one embodiment, a method comprises depositing one or more rare earth metal-containing ceramic compounds on an article by atomic layer deposition, for example, to coat surfaces of high aspect ratio internal channels.

Atomic layer deposition coatings for high temperature ceramic components

Embodiments of the present disclosure relate to articles, coated articles, and methods of coating such articles with a corrosion resistant coating. The corrosion resistant coating can comprise hafnium aluminum oxide. The corrosion resistant coating may be deposited by a non-line of sight deposition, such as atomic layer deposition. Articles that may be coated may include chamber components, such as gas lines.

Hafnium aluminum oxide coatings deposited by atomic layer deposition

Disclosed herein is a rare-earth oxide coating on a surface of an article with one or more interruption layers to control crystal growth and methods of its formation. The coating may be deposited by atomic layer deposition and/or by chemical vapor deposition. The rare-earth oxides in the coatings disclosed herein may have an atomic crystalline phase that is different from the atomic crystalline phase or the amorphous phase of the one or more interruption layers.

Zone-controlled rare-earth oxide ALD and CVD coatings

A method includes performing ion beam sputtering with ion assisted deposition to deposit a protective layer on a surface of a body. The protective layer is a plasma resistant rare earth-containing film of a thickness less than 1000 μm. The porosity of the protective layer is below 1%. The plasma resistant rare earth-containing film consists of 40 mol % to less than 100 mol % of YO, over 0 mol % to 60 mol % of ZrO, and 0 mol % to 9 mol % of AlO.

Ion beam sputtering with ion assisted deposition for coatings on chamber components

Disclosed herein is a plasma-resistant chamber component and a method for manufacturing the same. A plasma-resistant chamber component of a semiconductor processing chamber that generates a plasma environment includes a ceramic article having multiple polished apertures. A roughness of the multiple polished apertures is less than 32 μin.

Chamber components with polished internal apertures

A method comprises depositing a first layer of aluminum oxide onto a surface of a chamber component via atomic layer deposition (ALD). The method further comprises depositing a second layer of yttrium oxide onto a surface of the chamber component via ALD, depositing a third layer of zirconium oxide onto the surface of the chamber component via ALD, and forming a corrosion and erosion resistant coating comprising a YZrOsolid state phase of the second layer and the third layer, wherein x and y have values that are based on a number of repetitions of the atomic layer deposition process that are used to deposit the second layer and a number of repetitions of the atomic layer deposition process that are used to deposit the third layer.

Atomic layer deposition of protective coatings for semiconductor process chamber components

Disclosed are methods of forming a chamber component for a process chamber. The methods may include filling a mold with nanoparticles or plasma spraying nanoparticles, where at least a portion of the nanoparticles include a core particle and a thin film coating over the core particle. The core particle and thin film are formed of, independently, a rare earth metal-containing oxide, a rare earth metal-containing fluoride, a rare earth metal-containing oxyfluoride, or combinations thereof. The nanoparticles may have a donut-shape having a spherical form with indentations on opposite sides. The methods also may include sintering the nanoparticles to form the chamber component and materials. Further described are chamber components and coatings formed from the described nanoparticles.

Methods of making nanopowders, nanoceramic materials and nanoceramic components

A lid or other chamber component for a process chamber comprises a) at least one surface comprising a first ceramic material, wherein the first ceramic material comprises YAlOand b) an internal region beneath the at least one surface comprising a second ceramic material, wherein the second ceramic material comprises a combination of AlOand ZrO.

Plasma resistant process chamber lid

Described herein are articles, systems and methods where a plasma resistant coating is deposited onto a surface of an article using an atomic layer deposition (ALD) process. The plasma resistant coating has a first layer and a second layer including a solid solution of YO—ZrOand uniformly covers features, such as those having an aspect ratio of length to width of about 3:1 to about 300:1.

Multi-layer plasma resistant coating by atomic layer deposition

A plasma chamber includes a chamber body having a processing region therewithin, a liner disposed on the chamber body, the liner surrounding the processing region, a substrate support disposed within the liner, a magnet assembly comprising a plurality of magnets disposed around the liner, and a magnetic-material shield disposed around the liner, the magnetic-material shield encapsulating the processing region near the substrate support.

Magnetic-material shield around plasma chambers near pedestal

Examples disclosed herein relate to a method and apparatus for cleaning and repairing a substrate support having a heater disposed therein. A method includes (a) cleaning a surface of a substrate support having a bulk layer, the substrate support is disposed in a processing environment configured to process substrates. The cleaning process includes forming a plasma at a high temperature from a cleaning gas mixture having a fluorine containing gas and oxygen. The method includes (b) removing oxygen radicals from the processing environment with a treatment plasma formed from a treatment gas mixture. The treatment gas mixture includes the fluorine containing gas. The method further includes (c) repairing an interface of the substrate support and the bulk layer with a post-treatment plasma. The post-treatment plasma is formed from a post-treatment gas mixture including a nitrogen containing gas. The high temperature is greater than or equal to about 500 degrees Celsius.

High-temperature chamber and chamber component cleaning and maintenance method and apparatus

An article such as a susceptor includes a body of a thermally conductive material coated by a first protective layer and a second protective layer over a surface of the body. The first protective layer is a thermally conductive ceramic. The second protective layer covers the first protective layer and is a plasma resistant ceramic thin film that is resistant to cracking at temperatures of 650 degrees Celsius.

Plasma erosion resistant thin film coating for high temperature application

Certain embodiments of the present disclosure relate to ceramic materials with high thermal shock resistance and high erosion resistance. In one embodiment, a ceramic material is formed from a composition comprising AlO, MgO, SiO.

Ceramic material with high thermal shock resistance and high erosion resistance

Disclosed herein is a plasma-resistant chamber component and a method for manufacturing the same. A plasma-resistant chamber component of a semiconductor processing chamber that generates a plasma environment includes a ceramic article having multiple polished apertures. A roughness of the multiple polished apertures is less than 32 &#x3bc;in.

Methods of forming a metal oxyfluoride films are provided. A substrate is placed in an atomic layer deposition (ALD) chamber having a processing region. Flows of zirconium-containing gas, a zirconium precursor gas, for example, Tris(dimethylamino)cyclopentadienyl zirconium, an oxygen-containing gas, a fluorine containing gas, and an yttrium precursor, for example, tris(butylcyclopentadienyl)yttrium gas are delivered to the processing region, where a metal oxyfluoride film such as an yttrium zirconium oxyfluoride film, is formed.

Metal oxyfluoride film formation methods

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Mountain View, CA, United States of America

Jennifer Y Sun