Hewlett-packard Development Company, L.P.

Samsung Electronics Co., Ltd.

Jennifer Wu

James McKinnell

Vladek P Kasperchik

James William Stasiak

Adel Jilani

Yong Qin Chen

Pavel Kornilovich

Robert G Walmsley

Kevin Francis Peters

Melinda M Valencia

David A Champion

Mohammed Saad Shaarawi

Silam J Choy

Eric Lee Nikkel

Michael G Monroe

Donald J Milligan

David E Hackleman

Vladimir Jakubek

Jason Cassidy Hower

Thomas W Butler

Natalie Harvey

Rodney L Alley

Brian D Homeijer

Zhuqing Zhang

Daniel Mosher

Sheldon A Bernard

Wallace Andrew Dingman

James Mckinnell

A multi-fluid kit for three-dimensional printing can include a wetting agent and a binding agent. The wetting agent can include from 0 wt % to about 49.8 wt % water, from about 0.5 wt % to about 30 wt % film-forming organic solvent that can have a boiling point from greater than about 100° C. to about 350° C., and from about 30 wt % to about 99.5 wt % amphiphilic solvent that can have a boiling point from about 45° C. to less than about 100° C. The amphiphilic solvent can be water-miscible and can be present in the wetting agent at a greater concentration than the water and at a greater concentration than the film-forming solvent. The binding agent can include from about 2 wt % to about 30 wt % of a polymer binder dispersed in an aqueous liquid vehicle.

Three-dimensional printing with wetting agent

According to examples, an apparatus may include a processor and a memory on which are stored machine-readable instructions that when executed by the processor, cause the processor to determine physical characteristics of a build layer of build material particles. The instructions may also cause the processor to determine an adjustment to forming data based on the determined physical characteristics, the forming data to be used informing a subsequent build layer. The instructions may further cause the processor to apply the determined adjustment to the forming data for use in forming the subsequent build layer, in which portions of a three-dimensional (3D) object are to be formed in the build layer and the subsequent build layer.

Adjustments to forming data for forming a build layer

In an example of a method for three-dimensional printing, a first amount of a binding agent is selectively applied, based on a 3D object model, to individual build material layers of a particulate build material including metal particles to forming an intermediate structure. The binding agent and/or a void-formation agent is selectively applied, based on the 3D object model, to at least one interior layer of the individual build material layers so that a total amount of the binding agent, the void-formation agent, or both the binding agent and the void-formation agent in the at least one of the individual build material layers is greater than the first amount. This patterns an area that is to contain voids. The intermediate structure is heated to form a 3D structure including a void-containing breakable connection.

Three-dimensional printing

The present disclosure is drawn to an inkjet printing system including an ink composition and a microfluidic ejection assembly. The ink composition can include carbon black pigment, from 50 wt % to 80 wt % water, from 10 wt % to 40 wt % of an organic solvent system, and from 0.5 wt % to 6 wt % polyurethane. The microfluidic ejection assembly can include a drop generator for externally ejecting the ink composition, and a fluid pump for internally inducing microfluidic recirculation flow of the ink composition into the drop generator.

Inkjet printing systems

A sensor having a particle barrier is described. In an example, a sensor includes: first and second electrode sets respectively disposed upon a planar support surface and a proof mass that is compliantly displaceable along a first axis substantially parallel to the planar support surface; and a first barrier disposed on the planar support around the first electrode set having a height less than a gap between the planar support and the proof mass to mitigate particle migration into the first or second electrode set.

Sensor having particle barrier

A device including a semiconductor, a substrate, and an interposer. The interposer is attached between the semiconductor and the substrate to absorb stresses between the semiconductor and the substrate.

Device including interposer between semiconductor and substrate

Illustrative acoustic transducers are provided. A monolithic semiconductor layer defines a plate, two or more flexible extensions and at least a portion of a support structure. Acoustic pressure transferred to the plate results in tensile strain of the flexible extensions. The flexible extensions exhibit varying electrical characteristics responsive to the tensile strain. An electric signal corresponding to the acoustic pressure can be derived from the varying electrical characteristics and processed for further use.

Acoustic energy transducer

Acoustic transducer means are provided. A monolithic semiconductor layer defines a plate, a pair of oppositely disposed torsional hinges, a flexible extension and at least a portion of a support structure. Acoustic pressure communicated to the plate results in tensile strain of the flexible extension. The flexible extension provides a varying electrical characteristic responsive to the tensile strain. An electric signal corresponding to the acoustic pressure can be derived from the varying electrical characteristic of the flexible extension.

Acoustic pressure transducer

Various embodiments and methods relating to a pressure sensor having a flexure supported piezo resistive sensing element are disclosed.

Piezo resistive pressure sensor

A memory device including a substrate, and multiple self-aligned nano-rectifying elements disposed over the substrate. Each nano-rectifying element has multiple first electrode lines, and multiple device structures disposed on the multiple first electrode lines forming the multiple self-aligned nano-rectifying elements. Each device structure has at least one lateral dimension less than about 75 nanometers. The memory device also includes multiple switching elements disposed over the device structures and self-aligned in at least one direction with the device structures. In addition, the memory device includes multiple second electrode lines disposed over, electrically coupled to, and self-aligned to the switching elements, whereby a memory device is formed.

Nanometer-scale memory device utilizing self-aligned rectifying elements and method of making

A memory device including a substrate, and multiple self-alignednano-rectifying elements disposed over the substrate. Each nano-rectifying element has multiple first electrode lines, and multiple device structures disposed on the multiple first electrode lines forming the multiple self-aligned nano-rectifying elements. Each device structure has at least one lateral dimension less than about 75 nanometers. The memory device also includes multiple switching elements disposed over the device structures and self-aligned in at least one direction with the device structures. In addition, the memory device includes multiple second electrode lines disposed over, electrically coupled to, and self-aligned to the switching elements, whereby a memory device is formed.

A semiconductor device including a substrate having a dopant of a first polarity, a first semiconducting structure including a dopant of a second polarity disposed over the substrate, and having substantially planar top and side surfaces. The semiconductor device includes a first junction, formed between the first semiconducting structure and the substrate, having an area wherein at least one lateral dimension is less than about 75 nanometers.

Growing community of inventors

Corvallis, OR, United States of America

Jennifer Wu