System General Corporation

Systems General Corp.

System Chemical Corp.

Jenn-Yu G Lin

Ta-Yung Yang

Chih-Feng Huang

Tuo-Hsin Chien

Chern-Lin Chen

Guo-Kiang Hung

Chuh-Ching Li

Rui-Hong Lu

Wei-Hsuan Huang

Song-Yi Lin

Cheng-Chi Hsueh

Yi-Chi Lin

Feng Cheng Tsao

Yi-Hsin Leu

Chem-Lin Chen

Ta-yung Yang

Chou-Sheng Wang

Hsuan-I Pan

Yi-Min Hsu

Tse-Jen Tseng

Chen-Hui Chan

Shao-Chun Huang

Chien-Liang Chen

Chiu Shao Wei

Shao-Wei Chiu

Shu-chung Yi

Rui-hong Lu

Cheng-chi Hsueh

An apparatus of programming an output of a programmable power adapter according to the present invention comprises a control circuit. The method according to the present invention sends a signal to a device. A resistor is coupled to the signal to determine the level of the signal. The resistor is installed in the device. The method according to the present invention checks the level of the signal in the programmable power adapter and determines an output voltage of the programmable power adapter in accordance with the level of the signal. The output voltage of the programmable power adapter is coupled to the device to provide a power for a load of the device.

Method and apparatus for selecting the output of programmable power adapter

A wall control interface for power management includes a transmitting circuit that generates a switching signal to control a switch and achieve a phase modulation to a power line signal in response to a transmitting-data. A receiving circuit is coupled to detect the phase of the power line signal for generating a data signal and a receiving-data in response to the phase of the power line signal. The receiving circuit further generates a control signal to control power of a load in accordance with the data signal or the receiving-data. The phase modulation is achieved by controlling a turn-on angle of the power line signal. The switch remains in a turn-on state during the normal condition, which achieves good power and low current harmonic. The phase modulation is only performed during the communication of the power management.

Receiving control circuit for a wall control interface with phase modulation and detection for power management

A low drop-out regulator is disclosed. An unregulated DC input terminal receives an input voltage. A pass circuit is coupled between the unregulated DC input terminal and a regulated DC output terminal for supplying a power to the regulated DC output terminal. An amplifying circuit controls the pass circuit for providing a constant voltage or/and a constant current in response to an output voltage or/and an output current.

Low drop-out regulator providing constant current and maximum voltage limit

A control circuit of a power converter for light-load power saving according to the present invention comprises a first feedback circuit coupled to an output voltage of the power converter to receive a first feedback signal. A second feedback circuit is coupled to the output voltage to receive a second feedback signal. A control circuit generates a switching signal for switching a transformer of the power converter and regulating the output voltage of the power converter in response to the first feedback signal and the second feedback signal. The switching signal is generated in accordance with the first feedback signal when an output load is high. The switching signal is generated in accordance with the second feedback signal during a light-load condition.

Output voltage control circuit of power converter for light-load power saving

Wall control interface with phase modulation and detection for power management

A switching regulator of a power converter is provided and includes a feedback-input circuit, a programming circuit, and a peak-current-threshold circuit. The feedback-input circuit is coupled to a terminal of the switching regulator for receiving a feedback signal. The feedback-input circuit is operated in a first range of a terminal signal. The programming circuit is coupled to the terminal for generating a programming signal. The programming signal is operated in a second range of the feedback signal. The peak-current-threshold circuit generates a threshold signal in accordance with the programming signal. The feedback signal is coupled to regulate the output of the power converter, and the threshold signal is coupled to limit a peak switching current of the power converter.

Switching regulator having terminal for feedback signal inputting and peak switching current programming

A power supply system is introduced herein. The power supply system includes a power converter to supply a power source to an electronic circuit through an output cable of the power supply. A communication unit is coupled to the output cable of the power supply to develop a communication channel between the power converter and the electronic circuit in order to report the status of the power converter to the electronic circuit.

Method and apparatus for providing a communication channel through an output cable of a power supply

A switching controller for parallel power converters is disclosed. The switching controller includes an input circuit coupled to an input terminal of the switching controller to receive an input signal. An integration circuit is coupled to the input circuit to generate an integration signal in response to the pulse width of the input signal. A control circuit generates a switching signal for switching the power converters. The switching signal is enabled in response to the enabling of the input signal. A programmable delay time is generated between the input signal and the switching signal. The pulse width of the switching signal is determined in response to the integration signal.

Switching controller for parallel power converters

A MOSFET with an isolation structure is provided. An N-type MOSFET includes a first N-type buried layer and a P-type epitaxial layer disposed in a P-type substrate. A P-type FET includes a second N-type buried layer and the P-type epitaxial layer disposed in the P-type substrate. The first, second N-type buried layers and the P-type epitaxial layer provide isolation between FETs. In addition, a plurality of separated P-type regions disposed in the P-type epitaxial layer further provides an isolation effect. A first gap exists between a first thick field oxide layer and a first P-type region, for raising a breakdown voltage of the N-type FET. A second gap exists between a second thick field oxide layer and a second N-well, for raising a breakdown voltage of the P-type FET.

MOSFET with isolation structure and fabrication method thereof

A switching controller having switching frequency hopping for a power converter includes a first oscillator generating a pulse signal and a maximum duty-cycle signal for determining a switching frequency of a switching signal, a pattern generator having a second oscillator and generating a digital pattern code in response to a clock signal, a programmable capacitor coupled to the pattern generator and the first oscillator for modulating the switching frequency of the switching signal in response to the digital pattern code, and a PWM circuit coupled to the first oscillator for generating the switching signal in accordance with the maximum duty-cycle signal. A maximum on-time of the switching signal is limited by the maximum duty-cycle signal. The switching signal is utilized to switch a transformer of the power converter.

Switching controller having switching frequency hopping for power converter

A method of manufacturing different-voltage devices mainly comprises forming at least one high-voltage well in high-voltage device regions, at least one N-well in low-voltage device regions, at least one P-well in low-voltage device regions, source/drain wells in high-voltage device regions, and isolation wells in isolation regions in a p-type substrate. The breakdown voltage is adjusted by modulating the ion doping profile. Furthermore, parameters of implanting conductive ions are adjusted for implanting conductive ions into both high-voltage device regions and low-voltage device regions. The isolation wells formed in isolation regions between devices are for separating device formed over high-voltage device regions and device formed over low-voltage device regions. The thickness of a HV gate oxide layer is thicker than the thickness of an LV gate oxide layer for modulating threshold voltages of high-voltage devices and low-voltage devices.

Different-voltage device manufactured by a CMOS compatible process and high-voltage device used in the different-voltage device

A MOSFET device with an isolation structure for a monolithic integration is provided. A P-type MOSFET includes a first N-well disposed in a P-type substrate, a first P-type region disposed in the first N-well, a P+ drain region disposed in the first P-type region, a first source electrode formed with a P+ source region and an N+ contact region. The first N-well surrounds the P+ source region and the N+ contact region. An N-type MOSFET includes a second N-well disposed in a P-type substrate, a second P-type region disposed in the second N-well, an N+drain region disposed in the second N-well, a second source electrode formed with an N+ source region and a P+ contact region. The second P-type region surrounds the N+ source region and the P+ contact region. A plurality of separated P-type regions is disposed in the P-type substrate to provide isolation for transistors.

MOSFET with isolation structure for monolithic integration and fabrication method thereof

An electrostatic discharge (ESD) protection device with adjustable single-trigger or multi-trigger voltage is provided. The semiconductor structure has multi-stage protection semiconductor circuit function and adjustable discharge capacity. The single-trigger or multi-trigger semiconductor structure may be fabricated by using the conventional semiconductor process, and can be applied to IC semiconductor design and to effectively protect the important semiconductor devices and to prevent the semiconductor devices from ESD damage. In particular, the present invention can meet the requirements of high power semiconductor device and has better protection function compared to conventional ESD protection circuit. In the present invention, a plurality of N-wells or P-wells connected in parallel are used to adjust the discharge capacity of various wells in the P-substrate so as to improve the ESD protection capability and meet different power standards.

Electrostatic discharge protection semiconductor structure

The present invention provides a primary-side flyback power converter that supplies a constant voltage output and a constant current output. To generate a well-regulated output voltage under varying load conditions, a PWM controller is included in the power converter in order to generate a PWM signal controlling a switching transistor in response to a flyback voltage sampled from a first primary winding of the power supply transformer. Several improvements are included in this present invention to overcome the disadvantages of prior-art flyback power converters. Firstly, the flyback energy of the first primary winding is used as a DC power source for the PWM controller in order to reduce power consumption. A double sample amplifier samples the flyback voltage just before the transformer current drops to zero. Moreover, an offset current is pulled from a detection input of the double sample amplifier in order to generate a more accurate DC output voltage. The offset current is generated in response to the temperature in order to compensate for temperature-induced voltage fluctuations across the output rectifier. Ultimately, in order to maintain a constant output current, the PWM controller modulates the switching frequency in response to the output voltage.

Primary-side controlled flyback power converter

An electrostatic discharge (ESD) device has a parasitic SCR structure and a controllable trigger voltage. The controllable trigger voltage of the ESD device is achieved by modulating a distance between an edge of a lightly doped well and an edge of a heavily doped region located at two ends of the lightly doped well. Since the distance and the trigger voltage are linearly proportional, the trigger voltage can be set to a specific value from a minimum value to a maximum value.

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Taipei, Taiwan

Jenn-Yu G Lin