Tsinghua University

Jenn-Chang Hwang

Chung Hwa Wang

Wei-Yu Chen

Chun-Yi Lee

Da-Jeng Yao

Chih-Fang Huang

Chwung-Shan Kou

Chien-Hsun Chen

Cheng-Lun Tsai

Chien-Cheng Chen

Jian-You Lin

Chwung-Shan Kuo

Wen Chieh Wang

Chi-Ming Hung

Chung-Hua Wang

Li Shiuan Tsai

Ya-Ko Chih

An-Ping Lee

Sheng-Wei Chen

Chao Ying Hsieh

Cheng Wei Chou

Li-Shiuan Tsai

Hsiao Wen Zan

An N-type organic thin film transistor, an ambipolar field-effect transistor, and methods of fabricating the same are disclosed. The N-type organic thin film transistor of the present invention comprises: a substrate; a gate electrode locating on the substrate; a gate-insulating layer covering the gate electrode, and the gate-insulating layer is made of silk protein; a buffering layer locating on the gate-insulating layer, and the buffering layer is made of pentacene; an N-type organic semiconductor layer locating on the buffering layer; and a source and a drain electrode, wherein the N-type organic semiconductor layer, the buffering layer, the source and the drain electrode are disposed over the gate dielectric layer.

N-type organic thin film transistor, ambipolar field-effect transistor, and method of fabricating the same

The present invention relates to a Schottky diode with a diamond rod, which comprises: a substrate with a gate layer formed thereon; a patterned insulating layer disposed on the gate layer, wherein the patterned insulating layer comprises a first contact region and a second contact region; a diamond rod disposed on the patterned insulating layer, wherein a first end of the diamond rod connects to the first contact region, and a second end of the diamond rod connects to the second contact region; a first electrode corresponding to the first contact region of the patterned insulating layer, and covering the first end of the diamond rod; and a second electrode corresponding to the second contact region of the patterned insulating layer, and covering the second end of the diamond rod, and a method for manufacturing the same.

Schottky diode with diamond rod and method for manufacturing the same

An organic thin film transistor is disclosed, which comprises an azole-metal complex compound used as the gate insulating layer. The method of making the self-assembled gate insulating layer is a water-based processing method that enables the azole-metal complex compound to be self-formed on the patterned gate electrode in a water-based solution and serves as a gate insulating layer. The organic thin film transistor (OTFT) of the present invention comprises the azole-metal complex compound used in the gate insulating layer, therefore can be manufactured in a simple, quick, easy way for large quantities, and low cost.

Organic thin film transistor, method of fabricating the same, and gate insulating layer used in the same

An organic thin film transistor (OTFT) and a metal-insulator-metal (MIM) capacitor using silk protein as a dielectric material, and methods for manufacturing the same are disclosed. The OTFT of the present invention comprises: a substrate; a gate electrode disposed on the substrate; a gate insulating layer containing silk protein, which is disposed on the substrate and covers the gate electrode; an organic semiconductor layer; and a source electrode and a drain electrode, wherein the organic semiconductor layer, the source electrode and the drain electrode are disposed over the gate insulating layer.

OTFT and MIM capacitor using silk protein as dielectric material and methods for manufacturing the same

A method of fabricating an organic thin film transistor is disclosed, which comprises steps of (S1) forming a gate electrode on a substrate; (S2) forming a gate insulating layer on the gate electrode; (S3) providing a gas on the surface of the gate insulating layer to form hydrophobic molecules on the surface of the gate insulating layer; (S4) forming an organic semiconductor layer, a source electrode, and a drain electrode over the gate insulating layer having hydrophobic molecules thereon, wherein the gas of step (S3) is at least one selected from the group consisting of halogen-substituted hydrocarbon, un-substituted hydrocarbon, and the mixtures thereof. The method of the present invention utilizes gases comprising carbon or fluorine atom to perform surface treatment on the surface of the gate insulating layer, therefore the hydrophobic character of the surface of the gate insulating layer can be enhanced and the electrical properties of the OTFT can be improved. Also, a method of surface treatment for the gate insulating layer is disclosed.

Method of fabricating an organic thin film transistor and method of surface treatment for gate insulating layer

A method of fabricating a silicon carbide (SiC) layer is disclosed, which comprises steps: (S) heating a silicon-based substrate at a temperature of X &#xb0; C.; (S) carburizating the silicon-based substrate with a first hydrocarbon-containing gas at a temperature of Y &#xb0; C. to form a carbide layer on the silicon-based substrate; (S) annealing the silicon-based substrate with the carbide layer thereon at a temperature of Z &#xb0; C.; and (S) forming a silicon carbide layer on the carbide layer with a second hydrocarbon-containing gas and a silicon-containing gas at a temperature of W &#xb0; C.; wherein, X is 800 to 1200; Y is 1100 to 1400; Z is 1200 to 1500; W is 1300 to 1550; and X&#x3c;Y&#x2266;Z&#x2266;W. In the method of the present invention, since no cooling steps between respective steps are required, the full process time can be reduced and the cost is lowered because no energy consumption occurs for the cooling and the re-heating steps.

Method of fabricating silicon carbide (SiC) layer

A vertical aligned nano-scale diamond structure comprising diamond nanotip or nanotube is provided. More particularly, apparatus and method are disclosed for depositing such diamond structure on a rugged polycrystalline substrate.

Vertical aligned nano-scale diamond structure and process for fabricating the same

Growing community of inventors

Hsinchu, Taiwan

Jenn-Chang Hwang