Macronix International Co., Ltd.

Jeng Hwa Liao

Jung-Yu Shieh

Zong-Jie Ko

Ling-Wuu Yang

Pei-Ci Jhang

Yumin Lin

Hsing-Ju Lin

A transistor structure including a substrate, a gate structure, first pocket doped regions, second pocket doped regions, and source/drain extension regions, and source/drain regions is provided. The gate structure is located on the substrate. The first pocket doped regions are located in the substrate aside the gate structure. A dopant of the first pocket doped region includes a group IVA element. The second pocket doped regions are located in the substrate aside the gate structure. A depth of the second pocket doped region is greater than a depth of the first pocket doped region. The source/drain extension regions are located in the first pocket doped regions. The source/drain regions are located in the substrate aside the gate structure. The source/drain extension region is located between the source/drain region and the gate structure.

Transistor structure and manufacturing method thereof

A semiconductor device includes polysilicon layer and a metal silicide layer. The polysilicon layer is doped with carbon or phosphorous. The silicide layer is formed over the polysilicon layer.

Semiconductor device and methods of manufacturing

Growing community of inventors

Hsinchu, Taiwan

Jeng Hwa Liao