Macronix International Co., Ltd.

Jeng-Hwa Liao

Jung-Yu Shieh

Ling-Wuu Yang

Ling-Wu Yang

Zong-Jie Ko

Provided is a semiconductor memory device including a substrate, a plurality of first isolation structures, and a plurality of second isolation structures. The substrate includes a periphery region and an array region. The first isolation structures are located in the substrate of the periphery region. The second isolation structures are located in the substrate of the array region. A material of the first isolation structures is different from a material of the second isolation structures. A width of each of the first isolation structures is greater than a width of each of the second isolation structures.

Semiconductor memory device and method of manufacturing the same

The method for fabricating a semiconductor device is provided. A doped semiconductor layer is formed over the substrate. The doped semiconductor layer is patterned to form a plurality of doped semiconductor patterns. An implantation process is performed to implant a dopant into the doped semiconductor patterns. A process temperature of the implantation process is no more than about &#x2212;50&#xb0; C. The dopants of the implantation process and the doped semiconductor patterns have the same conductivity type.

Methods for fabricating semiconductor device

The method of forming a wordline is provided in the present invention. The proposed method includes steps of: (a) etching a metal-silicide layer and a POLY layer via a hard mask, wherein the metal-silicide layer is disposed on the POLY layer; (b) forming a POLY recess in the POLY layer; and (c) forming a liner film covering the metal-silicide layer.

Method for reducing wordline bridge rate

A band gap engineered, charge trapping memory cell includes a charge storage structure including a trapping layer. a blocking layer, and a dielectric tunneling structure including a thin tunneling layer, a thin bandgap offset layer and a thin isolation layer comprising silicon oxynitride. The memory cell is manufactured using low thermal budget processes.

Growing community of inventors

Hsinchu, Taiwan

Jeng-Hwa Liao