Nan Ya Technology Corporation

Jeng-Hsing Jang

Yi-Nan Chen

Hsien-Wen Liu

A vertical MOSFET electrostatic discharge device is disclosed, including a substrate comprising a plurality of trenches, a recessed gate disposed in each trench, a drain region disposed between each of the two neighboring recessed gates, an electrostatic discharge implant region disposed under each drain region, and a source region surrounding and disposed under the recessed gates and the electrostatic discharge implant regions.

Vertical MOSFET electrostatic discharge device

A wafer scrubber is disclosed, including a chamber, and a holder connecting to a spindle disposed in the chamber, wherein the holder supports a wafer, and the wafer spins to remove water on the wafer, and a meshed inner cup comprising a plurality of through holes disposed between the holder and a wall of the chamber, wherein the meshed inner cup receives water from a surface of the wafer and rotates around the spindle to release the water through the through holes.

Wafer scrubber

A method for forming a contact of a semiconductor device with reduced step height is disclosed, comprising forming a plurality of gates, forming a buffer layer on each of the gates, forming an insulating layer to fill spaces between the gates, forming strip-shaped photoresist patterns which cross the gates, etching the insulating layer to form first openings using a self-aligning process with the gates and the strip-shaped photoresist patterns as a mask, forming a conductive contact layer to fill the first openings, performing a first chemical mechanical polish (CMP) process to the conductive contact layer, removing the buffer layer, and forming a second chemical mechanical polish (CMP) process to the conductive contact layer.

Growing community of inventors

Taoyuan County, Taiwan

Jeng-Hsing Jang