Maxchip Electronics Corp.

Jen-Yao Hsu

Yu-Hsien Chen

Jin-Wei Chang

Ming-Chi Kuo

Hong-Xian Wang

Tsung-Chih Tsai

A high voltage bootstrap gate driving apparatus is provided. The gate driving apparatus includes a high-end transistor, a low-end transistor, a buffer, a boost capacitor, and a high voltage depletion transistor. The high-end transistor receives a first power voltage. The buffer provides a high-end driving signal to the high-end transistor according to a bias voltage. The boost capacitor is serial coupled between a base voltage and a bias voltage. A first end of the depletion transistor is coupled to a second power voltage, a second end of the depletion transistor is coupled to the bias voltage, and a control end of the depletion transistor receives the reference ground voltage.

High voltage bootstrap gate driving apparatus

An ambit light sensor with a function of IR sensing and a method of fabricating the same are provided. The ambit light sensor includes a substrate, an ambit light sensing structure, an infrared ray (IR) sensing structure, and a dielectric layer. The ambit light sensing structure is located over the substrate for sensing and filtering visible light. The IR sensing structure is located in the substrate under the ambit light sensing structure for sensing IR. The dielectric layer is located between the ambit light sensing structure and the IR sensing structure.

Growing community of inventors

Hsinchu County, Taiwan

Jen-Yao Hsu