Taiwan Semiconductor Manufacturing Comp. Ltd.

Jen-Tian Hsu

Wen-Hsiang Tang

A method for forming a shallow trench isolation feature to avoid acidic etching of trench sidewalls including providing a semiconductor substrate having an overlying silicon nitride layer; photolithographically patterning the silicon nitride layer to expose a portion of the silicon nitride layer; anisotropically etching through a thickness of the portion of the silicon nitride layer to form a hardmask opening exposing a portion of the semiconductor substrate; blanket depositing a polymer layer according to a plasma deposition process including at least partially covering the sidewalls and bottom portion of the hardmask opening; and, anisotropically etching a trench opening through a thickness portion of the semiconductor substrate according to the hardmask opening.

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Banchiau, Taiwan

Jen-Tian Hsu