Taiwan Semiconductor Manufacturing Comp. Ltd.

Jen-Shyan Lin

Dun-Nian Yaung

Jen-Cheng Liu

Shu-Ting Tsai

Min-Feng Kao

Feng-Chi Hung

Wen-De Wang

Chun-Chieh Chuang

Shuang-Ji Tsai

Wen-I Hsu

An image sensor structure that includes a first semiconductor substrate having a plurality of imaging sensors; a first interconnect structure formed on the first semiconductor substrate; a second semiconductor substrate having a logic circuit; a second interconnect structure formed on the second semiconductor substrate, wherein the first and the second semiconductor substrates are bonded together in a configuration that the first and second interconnect structures are sandwiched between the first and second semiconductor substrates; and a backside deep contact (BDCT) feature extended from the first interconnect structure to the second interconnect structure, thereby electrically coupling the logic circuit to the image sensors.

Structure and method for 3D Image sensor

The present disclosure provides a method of fabricating a semiconductor device, the method including providing a substrate having a seal ring region and a circuit region, forming a first seal ring structure over the seal ring region, forming a second seal ring structure over the seal ring region and adjacent to the first seal ring structure, and forming a first passivation layer disposed over the first and second seal ring structures. A semiconductor device fabricated by such a method is also provided.

Multiple seal ring structure

Growing community of inventors

Tainan, Taiwan

Jen-Shyan Lin