Motorola Corporation

Jen-Jiang Lee

Shih W Sun

Bich-Yen Nguyen

Philip J Tobin

Young Limb

Hoang K Nguyen

A semiconductor device, device metallization, and method are described. The device metallization, which is especially designed for submicron contact openings, includes titanium silicide to provide a low resistance contact to a device region, titanium nitride and sputtered tungsten to provide a diffusion barrier, etched back chemical vapor deposited tungsten for planarization, and aluminum or an aluminum alloy for interconnection.

Method for device metallization by forming a contact plug and

A method is described for the formation of high purity thin films on a semiconductor substrate. In the preferred embodiment of the invention a thin film is formed on a semiconductor substrate in a plasma enhanced chemical vapor deposition system. Energized silicon ions are obtained by mass analysis and are accelerated into a hydrogen-free plasma. A reaction occurs between energized atoms within the plasma and the energized silicon ions resulting in the deposition of a thin film on the semiconductor substrate.

Process for forming high purity thin films

Device metallization, device and method

Growing community of inventors

Austin, TX, United States of America

Jen-Jiang Lee