Taiwan Semiconductor Manufacturing Comp. Ltd.

Anpec Electronics Corporation

Mediatek Corporation

Jen-Hao Yeh

Fu-Chih Yang

Ru-Yi Su

Chih-Chang Cheng

Ker Hsiao Huo

Chun Lin Tsai

Li-Jui Chen

Po-Chung Cheng

Chun-Lin Louis Chang

Wei-Chieh Lin

Tzung-Chi Fu

Bo-Tsun Liu

Po-Chih Chen

Han-Lung Chang

Ho-Tai Chen

Chun-Lin Tsai

Guo-Liang Yang

Li-Cheng Lin

Hsin-Yu Hsu

Shih-Chieh Hung

Ker-Hsiao Huo

Yen-Shuo Su

Ming-Yang Chao

Jia-Fu Lin

Ting-Ya Cheng

Jhan-Hong Yeh

Chih-Chuan Liang

Hsin-Yen Chiu

Jaw-Juinn Horng

Chung-Hui Chen

Chun-Wei Hsu

Chia-Hui Chen

Henry Yee Shian Tong

Yao-Jen Liu

Yee-Shian Henry Tong

A method for monitoring a shock wave in an extreme ultraviolet light source includes irradiating a target droplet in the extreme ultraviolet light source apparatus of an extreme ultraviolet lithography tool with ionizing radiation to generate a plasma and to detect a shock wave generated by the plasma. One or more operating parameters of the extreme ultraviolet light source is adjusted based on the detected shock wave.

Shock wave visualization for extreme ultraviolet plasma optimization

A system includes a laser source operable to provide a laser beam, a laser amplifier having a gain medium operable to provide energy to the laser beam when the laser beam passes through the laser amplifier, and a residual gain monitor operable to provide a probe beam and operable to derive a residual gain of the laser amplifier from the probe beam when the probe beam passes through the laser amplifier while being offset from the laser beam in time or in path.

Residual gain monitoring and reduction for EUV drive laser

A method for generating EUV light includes providing a laser beam having a Gaussian distribution. This laser beam can be then modified from a Gaussian distribution to a ring-like distribution. The modified laser beam is provided through an aperture in a collector and interfaces with a moving droplet target, which generates an extreme ultraviolet (EUV) wavelength light. The generated EUV wavelength light is provided to the collector away from the aperture. In some embodiments, a mask element may also be used to modify the laser beam to a shape.

EUV radiation generation methods and systems

A method and system for generating EUV light includes providing a laser beam having a Gaussian distribution. This laser beam can be then modified from a Gaussian distribution to a ring-like distribution. The modified laser beam is provided through an aperture in a collector and interfaces with a moving droplet target, which generates an extreme ultraviolet (EUV) wavelength light. The generated EUV wavelength light is provided to the collector away from the aperture. In some embodiments, a mask element may also be used to modify the laser beam to a shape.

EUV radiation modification methods and systems

A device includes a buried well region and a first HVW region of the first conductivity, and an insulation region over the first HVW region. A drain region of the first conductivity type is disposed on a first side of the insulation region and in a top surface region of the first HVW region. A first well region and a second well region of a second conductivity type opposite the first conductivity type are on the second side of the insulation region. A second HVW region of the first conductivity type is disposed between the first and the second well regions, wherein the second HVW region is connected to the buried well region. A source region of the first conductivity type is in a top surface region of the second HVW region, wherein the source region, the drain region, and the buried well region form a JFET.

Embedded JFETs for high voltage applications

A light source system is provided. The light source system is capable of measuring a polarization angle and includes a light source configured to emit an original light beam, and the original light beam has an original polarization angle. The light source system further includes an amplifying module configured to amplify the original light beam and generate a forward beam for hitting a target, and the forward beam has a forward polarization angle that is equal to the original polarization angle. The light source system further includes a polarization measurement unit, and the polarization measurement unit includes a first polarization measurement module configured to receive a first return beam and measure a first polarization angle of the first return beam. The first return beam is reflected from the target.

Light source system and polarization angle adjusting method

A laser system includes a laser source operable to provide a laser beam; a laser amplifier having an input port and an output port and operable to amplify the laser beam, the laser beam travelling along a main beam path through the laser amplifier from the input port to the output port; and a residual gain monitor operable to provide a probe laser beam, the probe laser beam travelling along a probe beam path through the laser amplifier from the output port to the input port, wherein the residual gain monitor calculates a residual gain of the laser amplifier according to the probe laser beam.

An embodiment of a structure provides an enhanced performing high voltage device, configured as a lateral diffused MOS (HV LDMOS) formed in a tri-well structure (a small n-well in an extended p-type well inside an n-type well) within the substrate with an anti-punch through layer and a buried layer below the n-type well, which reduces substrate leakage current to almost zero. The drain region is separated into two regions, one within the small n-well and one contacting the outer n-type well such that the substrate is available for electric potential lines during when a high drain voltage is applied.

High voltage transistor structure

A high voltage metal-oxide-semiconductor laterally diffused device (HV LDMOS), and more particularly an insulated gate bipolar junction transistor (IGBT), is disclosed. The device includes a semiconductor substrate, a gate structure formed on the substrate, a source and a drain formed in the substrate on either side of the gate structure, a first doped well formed in the substrate, and a second doped well formed in the first well. The gate, source, second doped well, a portion of the first well, and a portion of the drain structure are surrounded by a deep trench isolation feature and an implanted oxygen layer in the silicon substrate.

Insulated gate bipolar transistor structure having low substrate leakage

Data compression/decompression methods and data compressor/de-compressor are provided. The data compression method includes the steps of scaling an input signal to generate a scaled signal; transmitting the scaled signal to a differentiator and an assembler; differentiating the scaled signal and a prior signal to generate a differentiation signal detecting zero bits of the differentiation signal to generate a zero range control signal and a zero range control word; refining the differentiation signal according to the zero range control signal to generate a refined signal; and determining to combine the zero range control word with the scaled signal or combine the zero range control word with the refined signal according to the zero range control word to generate a compressed signal.

Data compression and de-compression method and data compressor and data de-compressor

Growing community of inventors

Kaohsiung, Taiwan

Jen-Hao Yeh