National Yang Ming Chiao Tung University

Industrial Technology Research Institute

Jen-Chung Lou

Ching-Fa Yeh

Tien-Fu Chen

Ching-Yi Hsu

Farhang F Shadman

Kon-Tsu Kin

Chiou-Mei Chen

The present invention discloses a technique of removing a substance from a substrate surface, such as stripping photoresist from a wafer, or forming a substance on a substrate surface. Substrates to be treated are parallel arranged at an equal interval and are immersed in a liquid with only a lower portion thereof being below the liquid surface. Gas such as ozone is introduced into the liquid and is continuously bubbling below the substrates. The bubbles will ascend between two adjacent substrates and climb on the surfaces of the substrates before they burst. The liquid boundary layers on the substrate surfaces are compressed and refreshed in the course of a dragging ascent of the bubbles, enhancing mass transfer between gas/liquid/solid substances across the liquid boundary layer, thereby resulting in a fast reaction and a fast treatment of the surface of the substrates.

Method and apparatus for treating a substrate surface by bubbling

The present invention provides a method for fabrication of polycrystalline silicon thin film transistors, which forms a silicon spacer on the sidewall of the active layer of a thin film transistor (TFT) by way of anisotropic plasma etching in a single direction. The silicon spacer provides a mechanism for laser recrystallization on the sidewall to prevent the active layer from shrinkage or shelling-off after the laser recrystallization. According to the present invention, large grains can be formed in the channel without additional mask during production. By doing so, the characteristics of the components are enhanced; the uniformity is improved; and, the production cost is lowered. Therefore, this technique will play an important role in the fields of low temperature polycrystalline silicon thin film transistor (LTPS-TFT).

Method for fabrication of polycrystalline silicon thin film transistors

A method for fabricating polycrystalline silicon film transistors, which includes a polysilicon spacer capping onto a sidewall of an active layer in the thin film transistors by an isotropic dry etching of the silicon film. This method suppresses the shrinkage of the active layer during recrystallization by the laser. Large grains are formed in the channel after recrystallization utilizing a high-energy continuous wavelength laser or an excimer laser annealing the active layer. This process does not require an additional mask. Uniform arrangement of grain boundaries and large grain sizes promotes uniformity of performance of the device, which is important in the fields of low temperature polycrystalline silicon thin film transistors (LTPS-TFTs).

Method for fabrication of polycrystallin silicon thin film transistors

Growing community of inventors

Hsinchu, Taiwan

Jen-Chung Lou