Corning Incorporated

Jen-Chieh Lin

Michael Lesley Sorensen

Pei-Lien Tseng

Timothy Michael Gross

Adam James Ellison

Daniel Warren Hawtof

Prantik Mazumder

Mingqian He

Theresa Chang

Lu Zhang

Sean Matthew Garner

Timothy James Orsley

Robert George Manley

Jiangwei Feng

Gary Richard Trott

Weijun Niu

Kaveh Adib

Richard Curwood Peterson

James Robert Matthews

Polly Wanda Chu

Cheng-Chung Li

David Neal Schissel

Rajesh Vaddi

Kuan-Ting Kuo

Archit Lal

Jian-Zhi Jay Zhang

Jianfeng Li

Ya-Huei Chang

Robert Bumju Lee

Chouhwan Moon

Louis Charles Glasgow

Display tiles comprising pixel elements on a first surface of a substrate connected by an electrode, a driver located opposite the first surface, and a connector wrapped around an edge surface of the substrate connecting the driver to the pixel elements. Displays comprised of display tiles and methods of manufacturing display tiles and displays are also disclosed.

Bezel-free display tile with edge-wrapped conductors and methods of manufacture

Embodiments of the disclosure relate to a method for fabricating semiconductor-on-insulator (SemOI) electronic components. In the method, a device wafer is bonded to a handling wafer. The device wafer includes a semiconductor device layer and a buried oxide layer. A substrate is adhered to the handling wafer. The substrate is a glass or a ceramic, and bonding occurs at an interface between the semiconductor device layer and the substrate. Material is removed from the device wafer to expose the buried oxide layer. The substrate is debonded from the handling wafer so as to provide an SemOI electronic component including the substrate, the semiconductor device layer, and the buried oxide layer.

Thin glass or ceramic substrate for silicon-on-insulator technology

A glass element having a thickness from 25 &#x3bc;m to 125 &#x3bc;m, a first primary surface, a second primary surface, and a compressive stress region extending from the first primary surface to a first depth, the region defined by a compressive stress &#x3c3;I of at least about 100 MPa at the first primary surface. Further, the glass element has a stress profile such that it does not fail when it is subject to 200,000 cycles of bending to a target bend radius of from 1 mm to 20 mm, by the parallel plate method. Still further, the glass element has a puncture resistance of greater than about 1.5 kgf when the first primary surface of the glass element is loaded with a tungsten carbide ball having a diameter of 1.5 mm.

Bendable glass stack assemblies, articles and methods of making the same

A process includes providing a base substrate and disposing a precursor on the base substrate. The precursor includes powdered particles of a first material and an organic binder. The process includes photo-thermally treating the precursor to form a light extraction layer. The photo-thermal treatment includes exposing the precursor to a flash lamp that is energized in pulses. The process further includes disposing an organic light emitting diode adjacent to the light extraction layer.

Article for improved light extraction

Processes for making light extraction substrates for an organic light emitting diode using photo-thermal treatment

A high silica content substrate, such as for a device, is provided. The substrate has a high silica content and is thin. The substrate may include a surface with a topography or profile that facilitates bonding with a conductive metal layer, such as a metal layer for a circuit or antenna. The substrate may be flexible, have high temperature resistance, very low CTE, high strength and/or be non-reactive. The substrate may be suitable for use in circuits intended for use in high temperature environments, low temperature environments, reactive environments, or other harsh environments. The substrate may be suitable for high frequency antenna applications.

Silica content substrate such as for use harsh environment circuits and high frequency antennas

A formulation including: or mixtures of formulas (III) and (II); and where the respective R, x, and n are as defined herein, and optionally a tertiary liquid carrier, as defined herein. Also disclosed are semiconducting articles prepared with the formulations as defined herein.

Polymeric fused thiophene semiconductor formulation

Growing community of inventors

Zhubei, Taiwan

Jen-Chieh Lin