Taiwan Semiconductor Manufacturing Comp. Ltd.

Jen-Chieh Lai

Shih-Ho Lin

Yu-Chen Wei

Chun-Chieh Chan

Jheng-Si Su

Chun-Jui Chu

Chih-Yuan Yang

Huai-Tei Yang

Szu-Cheng Wang

Li-Hsiang Chao

Zhi-Sheng Hsu

Po-Ting Huang

A chemical mechanical polishing (CMP) apparatus is provided, including a polishing pad and a polishing head. The polishing pad has a polishing surface. The polishing head is configured to hold a wafer in contact with the polishing surface during the polishing process. The polishing head includes a retaining ring, at least one fluid channel, and a vacuum pump. The retaining ring is arranged along the periphery of the polishing head and configured to retain the wafer. The at least one fluid channel is provided inside the polishing head, wherein the retaining ring includes a bottom surface facing the polishing surface and a plurality of holes in fluid communication with the bottom surface and the at least one fluid channel. The vacuum pump is fluidly coupled to the at least one fluid channel.

Chemical mechanical polishing apparatus and method

A method for forming a semiconductor device structure is provided. The method includes forming a first layer over a substrate. The method includes forming a stop layer over the first layer. The method includes forming a second layer over the stop layer. The second layer is in direct contact with the stop layer. The method includes partially removing the second layer. The method includes performing an etching process to partially remove the stop layer and an upper portion of the first layer, wherein protrusion structures are formed over a lower portion of the first layer after the etching process, and the protrusion structures include the stop layer and the upper portion of the first layer remaining after the etching process. The method includes removing the protrusion structures.

Method for forming semiconductor device structure

A method of using a polishing system includes securing a wafer in a carrier head, the carrier head including a housing enclosing the wafer, in which the housing includes a retainer ring recess and a retainer ring positioned in the retainer ring recess, the retainer ring surrounding the wafer, in which the retainer ring includes a main body portion and a bottom portion connected to the main body portion, and a bottom surface of the bottom portion includes at least one first engraved region and a first non-engraved region adjacent to the first engraved region; pressing the wafer against a polishing pad; and moving the carrier head or the polishing pad relative to the other.

Method and system for performing chemical mechanical polishing

A chemical mechanical polishing method is provided, including polishing a batch of wafers in sequence on a polishing surface of a polishing pad; conditioning the polishing surface with a pad conditioner, wherein the pad conditioner is operable to apply downward force according to a predetermined downward force stored in a controller to condition the polishing surface; measuring the downward force applied by the pad conditioner with a measurement tool when the pad conditioner is at a home position and after conditioning the polishing surface; comparing the downward force measured by the measurement tool and the predetermined downward force with the controller to determine whether a difference between the downward force measured by the measurement tool and the predetermined downward force exceeds a range of acceptable values; and calibrating the downward force applied by the pad conditioner with the controller when the difference exceeds the range of acceptable values.

Chemical mechanical polishing method

A chemical mechanical polishing apparatus is provided. The chemical mechanical polishing apparatus includes a polishing pad, a pad conditioner, a measurement tool, and a controller. The polishing pad is provided in a processing chamber for polishing a wafer placed on the polishing surface of the polishing pad. The pad conditioner is configured to condition the polishing surface. The measurement tool is provided in the processing chamber and configured to measure the downward force of the pad conditioner. The controller is coupled to the pad conditioner and the measurement tool, and is configured to adjust the downward force of the pad conditioner in response to an input from the measurement tool.

A transporter for transporting an article used in semiconductor fabrication is provided. The transporter includes a robotic arm. The transporter further includes two platens connected to the robotic arm. Each of the two platens an inner surface facing the other, and a number of gas holes are formed on each of the inner surfaces of the two platens. The transporter also includes a gas supplier placed in communication with the gas holes. The gas supplier is used to control the flow of gas through the gas holes.

Article transporter in semiconductor fabrication

A method for forming a semiconductor device structure is provided. The method includes forming a first layer over a substrate. The first layer is made of a semiconductor material. The method includes forming a stop layer over the first layer. The method includes forming a second layer over the stop layer. The second layer is in direct contact with the stop layer. The method includes removing the second layer. The method includes performing an etching process to remove the stop layer and an upper portion of the first layer. The method includes performing a first planarization process over the first layer.

A method for forming a semiconductor device structure is provided. The method includes providing a wafer over a polishing platen. The wafer includes a metal layer and a dielectric layer. The metal layer covers the dielectric layer and fills an opening of the dielectric layer. The method also includes polishing the wafer using a first operation to thin down the metal layer. The first operation has a first polishing selectivity of the metal layer to the dielectric layer. The method further includes polishing the wafer using a second operation to further thin down the metal layer until the dielectric layer is exposed. The second operation has a second polishing selectivity of the metal layer to the dielectric layer. The second polishing selectivity is different from the first polishing selectivity. The first operation and the second operation are performed in-situ on the polishing platen.

Polishing process for forming semiconductor device structure

A method for transporting an article used in semiconductor fabrication is provided. The method includes moving a first transporter next to an article to have the article faces a plurality of gas holes formed on the first transporter; suspending the article with the first transporter in a non-contact manner by providing a flow of gas through the gas holes of the first transporter; and transferring the article with the first transporter while the flow of gas is continuously provided.

Article transferring method in semiconductor fabrication

A method for forming a semiconductor device structure is provided. The method includes forming a first layer over a substrate. The method includes forming a stop layer over the first layer. The method includes forming a second layer over the stop layer. The method includes performing a first planarization process over the second layer until the stop layer is exposed. The method includes performing an etching process to remove the second layer, the stop layer, and an upper portion of the first layer. The method includes performing a second planarization process over the first layer.

Apparatuses and methods for performing a post-CMP cleaning are provided. The apparatus includes a chamber configured to receive a wafer in need of having CMP residue removed. The apparatus also includes a spray unit configured to apply a first cleaning solution to at least one surface of the wafer. The apparatus further includes a brush cleaner configured to scrub the at least one surface of the wafer. In addition, the apparatus includes at least one inner tank disposed in the chamber for storing a second cleaning solution that is used to clean the brush cleaner.

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Tainan, Taiwan

Jen-Chieh Lai