Industrial Technology Research Institute

Jen-Chi Chuang

Yung-Fa Lin

Ming-Jeng Huang

An exemplary phase change memory device is provided, including a substrate with a first electrode formed thereover. A first dielectric layer is formed over the first electrode and the substrate. A plurality of cup-shaped heating electrodes is respectively disposed in a portion of the first dielectric layer. A first insulating layer is formed over the first dielectric layer, partially covering the cup-shaped heating electrodes and the first dielectric layer therebetween. A second insulating layer is formed over the first dielectric layer, partially covering the cup-shaped heating electrodes and the first dielectric layer therebetween. A pair of phase change material layers is respectively disposed on opposing sidewalls of the second insulating layer and contacting with one of the cup-shaped heating electrodes. A pair of first conductive layers is formed on the second insulating layer along the second direction, respectively.

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Hsinchu County, Taiwan

Jen-Chi Chuang