Epistar Corporation

Industrial Technology Research Institute

United Epitaxy Company, Inc.

Mediatek Corporation

Jen-Chau Wu

Chuan-Cheng Tu

Tzer-Perng Chen

Min-Hsun Hsieh

Hsin-Mao Liu

Tsung-Xian Lee

Cheng-Nan Han

Hsing-Chao Chen

Hung-Hsuan Chen

Chih-Peng Ni

Pao-I Huang

Yuh-Ren Shieh

Ching-San Tao

Chih-Ming Wang

Masafumi Sano

Chung-Cheng Tu

Chih-Chiang Lu

Shih-I Chen

Chungpin Liao

Wei-Chih Peng

Jin-Ywan Lin

Ching-Pu Tai

Ching San Tao

Cheng-Chung Yang

Tzu-Ying Yen

Han-Tsun Lai

Lyuji Ozawa

Chi-Nan Chen

Cheng-Chung Young

Jiin-Long Lin

Hsien Nan Ho

Shao-Kun Ma

Rong-Yih Hwang

Shiu-Mu Tang

The disclosure discloses an optoelectronic element comprising: an optoelectronic unit comprising a first metal layer, a second metal layer, and an outermost lateral surface; an insulating layer having a first portion overlapping the optoelectronic unit and extending beyond the lateral surface, and a second portion separated from the first portion in a cross-sectional view; and a first conductive layer formed on the insulating layer.

Optoelectronic element having reflective layer in contact with transparent layer covering side and bottom surfaces of the optoelectronic element

The present disclosure provides a light-emitting apparatus comprising a board having a plurality of first metal contacts and a plurality of second metal contacts on a top surface; a plurality of LEDs being bonded to the board, the each of the LEDs comprising a first cladding layer on the substrate, an active layer on the first cladding layer, a second cladding layer on the active layer, an upper surface on the second cladding layer, a first metal layer, and a second metal layer, wherein the first metal layer and the second metal layer are between the active layer and the board; an opaque layer between the adjacent LEDs and comprising a polymer mixed with a plurality of inorganic particles; and an encapsulating layer on the upper surfaces and opposite to the board, wherein the encapsulating layer does not cover a side wall of the active layer; and an underfill material between the board and the plurality of LEDs, wherein the underfill material surrounds each of the first metal layer and the second metal layer.

Plurality of light emitting devices having opaque insulating layer between them

Optoelectronic element

An optoelectronic element includes an optoelectronic unit, a first metal layer, a second metal layer, a conductive layer and a transparent structure. The optoelectronic unit has a central line in a top view, a top surface, and a bottom surface. The second metal layer is formed on the top surface, and has an extension portion crossing over the central line and extending to the first metal layer. The conductive layer covers the first metal layer and the extension portion. The transparent structure covers the bottom surface without covering the top surface.

An optoelectronic element includes an optoelectronic unit having a first top surface; a first metal layer on the first top surface; a first transparent structure surrounding the optoelectronic unit and exposing the first top surface; and a first contact layer on the first transparent structure, including a connective part electrically connected with the first metal layer.

Optoelectronic element and manufacturing method thereof

The present disclosure provides a method for forming a light-emitting apparatus, comprising providing a first board having a plurality of first metal contacts, providing a substrate, forming a plurality of light-emitting stacks and trenches on the substrate, wherein the light-emitting stacks are apart from each other by the plurality of the trenches, bonding the light-emitting stacks to the first board, forming an encapsulating material commonly on the plurality of the light-emitting stacks, and cutting the first board and the encapsulating material to form a plurality of chip-scale LED units.

Light emitting apparatus and manufacture method thereof

An optoelectronic element includes an optoelectronic unit having a first top surface, a first bottom surface opposite to the first top surface, and a lateral surface between the first top surface and the first bottom surface; a first transparent structure covering the lateral surface and exposing the first top surface of the optoelectronic unit; a first insulating layer on the first top surface and the first transparent structure; a second insulating layer on the first insulating layer; a first opening through the first insulating layer and the second insulating layer; and a first conductive layer on the second insulating layer and electrically connecting to the optoelectronic unit via the first opening.

A flip-chip LED including a light emitting structure, a first dielectric layer, a first metal layer, a second metal layer, and a second dielectric layer is provided. The light emitting structure includes a first conductive layer, an active layer, and a second conductive layer. The active layer is disposed on the first conductive layer, and the second conductive layer is disposed on the active layer. The first metal layer is disposed on the light emitting structure and is contact with the first conductive layer, and part of the first metal layer is disposed on the first dielectric layer. The second metal layer is disposed on the light emitting structure and is in contact with the second conductive layer, and part of the second metal layer is disposed on the first dielectric layer. The second dielectric layer is disposed on the first dielectric layer. The first conductive layer includes a rough surface so as to improve a light extraction efficiency.

Light emitting device and manufacture method thereof

An optoelectronic device such as a light-emitting diode chip is disclosed. It includes a substrate, a multi-layer epitaxial structure, a first metal electrode layer, a second metal electrode layer, a first bonding pad and a second bonding pad. The multi-layer epitaxial structure on the transparent substrate comprises a semiconductor layer of a first conductive type, an active layer, and a semiconductor layer of a second conductive type. The first bonding pad and the second bonding pad are on the same level. Furthermore, the first metal electrode layer can be patterned so the current is spread to the light-emitting diode chip uniformly.

Optoelectronic device

The invention provides a semiconductor light emitting device and the fabrication method of the same. The semiconductor light emitting device according to the invention comprises a multi-layer light emitting structure and a heat conducting layer. The multi-layer light emitting structure comprises a first layer. The first layer has an exposed first surface, and it also has a first thermal conductivity. The heat conducting layer is formed on and covers the first layer. The heat conducting layer has a second thermal conductivity, wherein the second thermal conductivity is greater than the first thermal conductivity.

Semiconductor light emitting device and fabrication method of the same

A method of making a light emitting diode (LED) is disclosed. The LED of the present invention comprises a semiconductor layer of a first polarity, an active layer, and a semiconductor layer of a second polarity stacked from bottom to up, wherein a stacked structure at least composed of the active layer and the semiconductor layer of the second polarity have a side with a wave-shape border in a top view of the LED and/or at least one valley, thereby increasing the efficiency of emitting the light to the outside of the LED.

Method of making light emitting diode with irregular surface and independent valleys

Method of making light emitting diode

A light emitting diode and the method of the same are provided. The light emitting diode includes a substrate, a thermal spreading layer, a connecting layer and an epitaxial structure. The substrate is selected from a transparent substrate or a non-transparent substrate, which corresponds to different materials of the connecting layers respectively. The thermal spreading layer, configured to improve the thermal conduction of the light emitting diode, is selected from diamond, impurity-doped diamond or diamond-like materials.

Light emitting diode with thermal spreading layer

Growing community of inventors

Hsinchu, Taiwan

Jen-Chau Wu