Osram Opto Semiconductors Gmbh

Jelena Ristic

Alfred Lell

Christoph Eichler

Werner Bergbauer

Adrian Stefan Avramescu

Martin Straβburg

Teresa Wurm

Alvaro Gomez-Iglesias

Martin Mandl

Uwe Strauβ

Martin Straßburg

Pierre Lefebvre

An assembly includes a carrier and a structure having a core formed on the carrier, wherein the core has a longitudinal extension having two end regions, a first end region is arranged facing the carrier and a second end region is arranged facing away from the carrier, the core is formed as electrically conductive at least in an outer region, the region is at least partially covered with an active zone layer, the active zone layer generates electromagnetic radiation, a mirror layer is provided at least in one end region of the core to reflect electromagnetic radiation in a direction, a first electrical contact layer contacts an electrically conductive region of the core, and a second contact layer contacts the active zone layer.

Light-emitting assembly having a carrier

An optoelectronic component and a method for the producing an optoelectronic component are disclosed. In an embodiment, the component comprises an active zone for generating electromagnetic radiation, wherein the active zone adjoins at least one layer arrangement of a semiconductor material, wherein the layer arrangement comprises at least two layers, wherein the two layers are formed in such a way that at an interface between the two layers a piezoelectric field is provided, the piezoelectric field configured to provide an electrical voltage drop at the interface, wherein a peak doping region is provided at the interface of the two layers in order to reduce the electrical voltage drop, wherein, in the direction away from the active zone, a doping of the peak doping region increases at least by a first percentage value and then decreases by at least a second percentage value, and wherein the first percentage value and the second percentage value are greater than 10% of a maximum doping of the peak doping region.

Optoelectronic component and method for the production thereof

An optoelectronic semiconductor component includes a layer stack based on a nitride compound semiconductor and has an n-type semiconductor region , a p-type semiconductor region and an active layer arranged between the n-type semiconductor region and the p-type semiconductor region. In order to form an electron barrier, the p-type semiconductor region includes a layer sequence having a plurality of p-doped layers composed of AlInGaN where 0&#x3c;=x&#x3c;=1, 0&#x3c;=y&#x3c;=1 and x+y&#x3c;=1. The layer sequence includes a first p-doped layer having an aluminum proportion x&#x3e;=0.5 and a thickness of not more than 3 nm, and the first p-doped layer, at a side facing away from the active layer, is succeeded by at least a second p-doped layer having an aluminum proportion x&#x3c;xand a third p-doped layer having an aluminum proportion x&#x3c;x

Optoelectronic semiconductor device

An assembly has a columnar structure arranged with one end on a substrate, wherein the structure is at least partly covered with a semiconductor layer structure having an active zone that generates electromagnetic radiation, the active zone has a band gap for a radiative recombination, and the band gap decreases along a longitudinal axis of the structure in a direction of a free end of the structure such that a diffusion of charge carriers in the direction of the free end of the structure and a radiative recombination of charge carrier pairs in the region of the free end of the structure are supported.

Light-emitting assembly having a semiconductor layer sequence having an active zone on a columnar structure

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Wuppertal, Germany

Jelena Ristic