Nexgen Semi Holding, Inc.

Lockheed Martin Corporation

Optical Communication Products, Inc.

Cielo Communications, Inc.

Optical Concepts, Inc.

C Speed Corporation

Nexgensemi Holdings Corporation

Nextgen Semi Holding, Inc.

Jeffrey Winfield Scott

Mark Joseph Bennahmias

Michael John Zani

Mark Mayse

Charles A Cockrum

Colin E Jones

Ernie J Caine

Stanley E Swirhun

John Wasserbauer

Mark Goodnough

Dale Isaacson

George Paloczi

Paul Merritt Hagelin

John J Fling

Kevin Malone

Elna Saito

Krisna Chandra Bhargava

John Hart Lindemann

James Kreider

Gene Raymond Loefer

David Brinkmann

Tehseen Abidi

Nicholas J Pfister

Mark Anthony Mayse

A charged particle buncher includes a series of spaced apart electrodes arranged to generate a shaped electric field. The series includes a first electrode, a last electrode and one- or more intermediate electrodes. The charged particle buncher includes a waveform device attached to the electrodes and configured to apply a periodic potential waveform to each electrode independently in a manner so as to form a quasi-electrostatic time varying potential gradient between adjacent electrodes and to cause spatial distribution of charged particles that form a plurality of nodes and antinodes. The nodes have a charged particle density and the antinodes have substantially no charged particle density, and the nodes and the antinodes are formed from a charged particle beam configured to hit the target.

Method and device for spatial charged particle bunching

A charged particle buncher includes a series of spaced apart electrodes arranged to generate a shaped electric field. The series includes a first electrode, a last electrode and one or more intermediate electrodes. The charged particle buncher includes a waveform device attached to the electrodes and configured to apply a periodic potential waveform to each electrode independently in a manner so as to form a quasi-electrostatic time varying potential gradient between adjacent electrodes and to cause spatial distribution of charged particles that form a plurality of nodes and antinodes. The nodes have a charged particle density and the antinodes have substantially no charged particle density, and the nodes and the antinodes are formed from a charged particle beam configured to hit the target.

A charged particle buncher includes a series of spaced apart electrodes arranged to generate a shaped electric field. The series includes a first electrode, a last electrode and one or more intermediate electrodes. The charged particle buncher includes a waveform device attached to the electrodes and configured to apply a periodic potential waveform to each electrode independently in a manner so as to form a quasi-electrostatic time varying potential gradient between adjacent electrodes and to cause spatial distribution of charged particles that form a plurality of nodes and antinodes. The nodes have a charged particle density and the antinodes have substantially no charged particle density, and the nodes and the antinodes are formed from a charged particle beam with an energy less than or equal to 500 keV.

A charged particle buncher includes a series of spaced apart electrodes arranged to generate a shaped electric-field. The series includes a first electrode, a last electrode and one or more intermediate electrodes. The charged particle buncher includes a waveform device attached to the electrodes and configured to apply a periodic potential waveform to each electrode independently in a manner so as to form a quasi-electrostatic time varying potential gradient between adjacent electrodes and to cause spatial distribution of charged particles that form a plurality of nodes and antinodes. The nodes have a charged particle density and the antinodes have substantially no charged particle density, and the nodes and the antinodes are formed from a charged particle beam with an energy greater than 500 keV.

A charged particle buncher includes a series of spaced apart electrodes arranged to generate a shaped electric field. The series includes a first electrode, a last electrode and one or more intermediate electrodes. The charged particle buncher includes a waveform device attached to the electrodes and configured to apply a periodic potential waveform to each electrode independently in a manner so as to form a quasi-electrostatic time varying potential gradient between adjacent electrodes and to cause spatial distribution of charged particles that form a plurality of nodes and antinodes. The nodes have a charged particle density and the antinodes have substantially no charged particle density, and the nodes and the antinodes are formed from a charged particle beam with an energy greater than 500 keV.

A system includes a focal plane array (FPA), support structure, optical assembly, flexing structure, and drive actuator. The FPA includes multiple pixels. The FPA captures an image as image data during an integration time interval. The optical assembly is fixed to the support structure and forms an image of a scene at the FPA. The flexing structure is mechanically coupled to both the support structure and the FPA, and allows the FPA to move relative to the support structure. The actuator is mechanically coupled to the FPA, and drives the FPA to move relative to the support structure. Some FPA have all readout elements arranged in a first regular grid with constant spacing, while some detector elements are on that grid and other detector elements are on a different grid offset by less than the constant spacing to provide sub-pixel resolution.

Method and system for scanning staring focal plane array imaging

A method includes etching one or more fluidic channels into a first substrate made of a first material according to a first spatial pattern. The method also includes, after etching the fluidic channels, then separately etching a space in the first substrate according to a different second pattern that includes at least one connection between at least two different portions of the fluidic channels. The method still further includes depositing a different second material into the space. The method yet further includes bonding a different second substrate to the first substrate to enclose the fluidic channels to configure them to contain or pass one or more fluids. For fabricating a Joule-Thomson cooler, the first substrate is made of a first thermally insulating material; the second material is a thermally conducting material; and the second substrate is made of a second thermally insulating material.

Integrating functional and fluidic circuits in joule-thomson microcoolers

A strain-balanced photodetector is provided for detecting infrared light at an extended cutoff wavelength in the range of 4.5 &#x3bc;m or more. An InAsSb absorber layer has an Sb content is grown in a lattice-mismatched condition to a GaSb substrate, and a plurality of GaAs strain-compensating layers are interspersed within the absorber layer to balance the strain of the absorber layer due to the lattice mismatch. The strain-compensation layers allow the absorber to achieve a thickness exhibiting sufficient absorption efficiency while extending the cutoff wavelength beyond that possible in a lattice-matched state. Additionally, the strain-compensation layers are sufficiently thin to be substantially quantum-mechanically transparent such that they do not substantially affect the transmission efficiency of the absorber. The photodetector is preferably formed as a majority carrier filter photodetector exhibiting minimal dark current, and may be provided individually or in a focal plane array.

Strain-balanced extended-wavelength barrier detector

A method of making a two-dimensional detector array (and of such an array) comprising, for each of a plurality of rows and a plurality of columns of individual detectors, forming an n-doped semiconductor photo absorbing layer, forming a bather layer comprising one or more of AlSb, AlAsSb, AlGaAsSb, AlPSb, AlGaPSb, and HgZnTe, and forming an n-doped semiconductor contact area.

Sub-pixel nBn detector

Extended wavelength digital alloy NBN detector

A chamber for exposing a workpiece to charged particles includes a charged particle source for generating a stream of charged particles, a collimator configured to collimate and direct the stream of charged particles from the charged particle source along an axis, a beam digitizer downstream of the collimator configured to create a digital beam including groups of at least one charged particle by adjusting longitudinal spacing between the charged particles along the axis, a deflector downstream of the beam digitizer including a series of deflection stages disposed longitudinally along the axis to deflect the digital beams, and a workpiece stage downstream of the deflector configured to hold the workpiece.

Apparatus and method for controlled particle beam manufacturing

A barrier-type photo-detector is provided with a Barrier between first and second layers. One of the layers is delineated into pixels without fully removing the non-pixel portions of the delineated layer. Delineation may be accomplished through material modification techniques such as ion damage, selective doping, ion induced disordering or layer material growth. Some variations may employ partial material removal techniques.

Barrier photodetector with planar top layer

Certain embodiments disclosed herein relate to the formation of multi-component oxide heterostructures (MCOH) using surface nucleation to pattern the atomic layer deposition (ALD) of perovskite material followed by patterned etch and metallization to produce ultra-high density MCOH nano-electronic devices. Applications include ultra-high density MCOH memory and logic, as well as electronic functionality based on single electrons, for example a novel flash memory cell Floating-Gate (FG) transistor with LaAlOas a gate tunneling dielectric. Other types of memory devices (DIMMS, DRAM, and DDR) made with patterned ALD of LaAlOas a gate dielectric are also possible.

Apparatus and method for manufacturing multi-component oxide heterostructures

A method of making a two-dimensional detector array (and of such an array) comprising, for each of a plurality of rows and a plurality of columns of individual detectors, forming an n-doped semiconductor photo absorbing layer, forming a barrier layer comprising one or more of AlSb, AlAsSb, AlGaAsSb, AlSb, AlGaPSb, and HgZnTe, and forming an n-doped semiconductor contact area.

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Carpinteria, CA, United States of America

Jeffrey Winfield Scott