Uchicago Argonne, LLC

University of Chicago

Northwestern University

Boise State University

Other

Kla Tencor Corporation

Incom Corporation

Forge Nano, Inc.

Jeffrey W Elam

Anil U Mane

Seth B Darling

Michael J Pellin

Joseph A Libera

Angel Yanguas-Gil

Yu-Chih Tseng

Qing Peng

Devika Choudhury

Jason R Croy

Christopher L Marshall

Alex B F Martinson

Peter C Stair

John N Hryn

Joong Sun Park

Steven Payonk Letourneau

Lin Chen

Donghyeon Kang

Matthias John Young

James Anthony Dumesic

Alan D Brodie

Joseph T Hupp

William M Tong

Henry J Frisch

Stefan Vajda

Elton Graugnard

Hao-Cheng Yang

Ruben Waldman

Robert G Wagner

Lei Xia

Jingbo Wang

Junqi Xie

Shannon C Riha

Howard Nicholson

Karl-Heinz Meiwes-Broer

Randall A Winans

Xiangbo Meng

Yomaira J Pagan-Torres

Kaizhong Gao

Khalil Amine

Christopher P Nicholas

Paul T Barger

Steven Alan Cohen

Ali Erdemir

Seth W Snyder

Jun Lu

Hakim H Iddir

Osman Eryilmaz

Arrelaine Allen Dameron

Eungje Lee

Deborah J Myers

Chien-min Kao

Chin-Tu Chen

Ulrich Welp

Yuepeng Zhang

Alex B Martinson

Gerry W Zajac

Arturo Gutierrez

Martha Leigh Abrams

Richard P Van Duyne

Philippe Guyot-Sionnest

Hsien-Hau Wang

Mahalingam Balasubramanian

Ryon Tracy

Edward F Barry

Anna Lee

Michael Minot

Nestor J Zaluzec

Yunsong Xie

Fukun Tang

Yujia Liang

Peng Du

Jean-Francois Genat

George C Schatz

Olga Lyandres

Jihyeon Gim

Zhaowei Chen

Nicholas G Becker

Thomas Proslier

Seon W Lee

Karen Byrum

Yu Lei

Elijah J Thimsen

Xiaoyu Zhang

Jing Zhao

Alyson V Whitney

Shengli Zou

Matthew Young

Hervé Grabas

Heejong Kim

Jeffrey Klug

Zheng Lu

Christian P Canlas

Aliraeza Nassiri

David Joseph Mandia

Stephen Magill

Maximillian Gebhard

Mark Popecki

Sara Kuraitis

HackSung Kim

A process for forming a lithium-metal-oxygen film on a lithium SSE. A metal-ligand complex is exposed to the SSE such as for 30-600 seconds in a chemical vapor transfer reactor at a temperature of 200-350° C.

Formation of lithium-metal-oxygen layer and removal of lithium carbonate on solid state electrolytes

A method for coating of lithium ion electrode materials via atomic layer deposition. The coated materials may be integrated in part as a dopant in the electrode itself via heat treatment forming a doped lithium electrode.

Modification of lithium ion electrode materials via atomic layer deposition techniques

A system and method for continuous atomic layer deposition. The system and method includes a housing, a moving bed which passes through the housing, a plurality of precursor gases and associated input ports and the amount of precursor gases, position of the input ports, and relative velocity of the moving bed and carrier gases enabling exhaustion of the precursor gases at available reaction sites.

System for continuous atomic layer deposition

A method of making thin films of sodium fluorides and their derivatives by atomic layer deposition ('ALD'). A sodium precursor is exposed to a substrate in an ALD reactor. The sodium precursor is purged, leaving the substrate with a sodium intermediate bound thereon. A fluorine precursor is exposed to the bound sodium intermediate in the ALD reactor. The fluorine precursor is purged and a sodium fluoride film is formed on the substrate.

Method of making thin films of sodium fluorides and their derivatives by ALD

An efficient, stable catalyst material having a thin film catalyst supported on a support of metal carbide, nitride, oxide, carbonitride, oxycarbonitride core. The thin film catalyst comprises a catalytic metal selected from the group consisting of platinum-group metals, platinum-group metal oxides, transition metals, transition metal oxides, and combinations thereof. The thin film catalyst is covalently bonded to the support.

Thin-film catalyst with enhanced catalyst-support interactions

A temporal Atomic Layer Deposition system and method utilizing precursor pulses applied to a moving substrate. The precursor pulses are self-exhausting.

Atomic layer deposition for continuous, high-speed thin films

A lithium boron coating and a method of producing the same. Atomic layer deposition deposits lithium and boron to form a lithium borate layer. The lithium borate maybe deposited as a solid electrolyte.

Atomic layer deposition of lithium boron comprising nanocomposite solid electrolytes

A secondary electron emissive layer resistant to infiltration and fouling. A barrier layer is formed by atomic layer deposition. The barrier layer may be an emissive layer and/or an interlayer. The barrier layer may form an interlayer that is a part of an electron amplifier positioned between an emissive layer and a resistive layer. The barrier layer is resistive to fluorine migration from either the emissive layer or the resistive layer.

Barrier coatings

Polymeric membranes are modified via SIS to promote membrane resilience, prolong membrane lifetime, and mitigate fouling. Modified membranes include an inorganic material within an outer portion of the modified membrane and a polymeric core that remains unmodified by the inorganic material. The polymer may be removed leaving an inorganic material patterned from an initial unmodified polymeric membrane.

Filtration membranes

Further described herein are extensions to the basic concept of LHs as electrode materials, include both new materials for use with LHs and higher order poly-layer hydroxides (PLHs) as well as methods for synthesizing improved LH material such as with conductive supports or through the use of cross-linking. Finally, also described herein are embodiments enabling the use of LHs as flow electrodes as well as the use of 2-d LH materials for surface redox reactions.

Layered hydroxides as anion insertion materials

The fabrication of robust interfaces between transition metal oxides and non-aqueous electrolytes is one of the great challenges of lithium ion batteries. Atomic layer deposition (ALD) of aluminum tungsten fluoride (AlWF) improves the electrochemical stability of LiCoO. AlWFthin films were deposited by combining trimethylaluminum and tungsten hexafluoride. in-situ quartz crystal microbalance and transmission electron microscopy studies show that the films grow in a layer-by-layer fashion and are amorphous nature. Ultrathin AlWFcoatings (<10 Å) on LiCoOsignificantly enhance stability relative to bare LiCoOwhen cycled to 4.4 V. The coated LiCoO2 exhibited superior rate capability (up to 400 mA/g) and discharge capacities at a current of 400 mA/g were 51% and 92% of the first cycle capacities for the bare and AlWFcoated materials. These results open new possibilities for designing ultrathin and electrochemically robust coatings of metal fluorides via ALD to enhance the stability of Li-ion electrodes.

Metal fluoride passivation coatings prepared by atomic layer deposition for Li-ion batteries

Coated nanofibers and methods for forming the same. A magnetic nanofiber is formed and a barrier coating is deposited on the magnetic nanofiber by atomic layer deposition ('ALD') process. The coated nanofiber may include a reduced magnetic nanostructure and a barrier coating comprising a first oxide coating on the nanofiber, the coating being non-reactive with the magnetic polymer nanofiber, the barrier coating have a thickness of 2 nm to 12 nm.

Creating and protecting magnetic nanomaterials

The sequential infiltration synthesis (SIS) and Atomic Layer Deposition (ALD) of metal and/or metal oxides on personal medical equipment (PPE). The deposited metal and/or metal oxides imbues antimicrobial properties to the PPE.

Antimicrobial coatings

A hybrid protective coating includes an inorganic component and an organic component such that the inorganic component includes at least one of a metal oxide, a metal fluoride, or combination thereof, and the organic component includes at least one metalcone.

Protective coatings for lithium anodes

ALD and p-CVD methods to generate MgBand MgB-containing films in the growth temperature range of 250-300&#xb0; C. The thermal ALD and p-CVD methods shown herein ensure that the high-temperature-induced roughening, which causes high surface resistances in MgBcoatings grown by the mentioned conventional techniques, is avoided. The MgBand MgB-containing films exhibit superconductive properties at above 20&#xb0; K.

Methods for low-temperature p-CVD and thermal ALD of magnesium diboride

Growing community of inventors

Elmhurst, IL, United States of America

Jeffrey W Elam