Applied Materials, Inc.

Varian Semiconductor Equipment Associates, Inc.

Merck Patent Gmbh

Jeffrey W Anthis

David P Thompson

Benjamin Schmiege

David Knapp

Nitin K Ingle

Mei Yin Chang

Xikun Wang

Feng Quan Liu

Srinivas Gandikota

Mark Joseph Saly

Seshadri Ganguli

Sang Ho Yu

Wei V Tang

Jie Liu

Jessica Sevanne Kachian

Schubert S Chu

Xinyu Fu

Shih Chung Chen

Atif Noori

Nasrin Kazem

Srinivas D Nemani

Abhijit Basu Mallick

Soonam Park

Xinliang Lu

Susmit Singha Roy

Ziqing Duan

Lin Xu

Atashi Basu

Tsung-Liang Chen

David Michael Thompson

David Benjaminson

Glen Gilchrist

Anchuan Wang

Hua Chung

Kelvin Chan

Bhaskar Jyoti Bhuyan

Qian Fu

Dien-Yeh Wu

Yixiong Yang

Abhishek Dube

Naomi Yoshida

Yihong Chen

Jacqueline S Wrench

Lakmal Charidu Kalutarage

Gill Yong Lee

Sung-Kwan Kang

Tatsuya E Sato

Ravi Kanjolia

Faruk Gungor

Jing Zhou

Simon Huang

Philip Alan Kraus

Yang Yang

Steven Verhaverbeke

Khaled Ahmed

Christian Dussarrat

Paul F Ma

Hyungjun Kim

Avgerinos V Gelatos

Mikhail Korolik

Timothy Weidman

Pravin K Narwankar

Yu Lei

Bo Zheng

Roman Gouk

Maitreyee Mahajani

Lance A Scudder

Patricia M Liu

Thomas Knisley

Kai Wu

Vladimir Zubkov

Yuriy Melnik

Feng Chen

Lei Zhou

Malcolm J Bevan

Liqi Wu

Sukti Chatterjee

Michael Sterling Jackson

David Alexander Britz

Rajesh Sathiyanarayanan

Kenichi Ohno

Michael G Haverty

Chang Ke

Bhushan N Zope

Steven C Hung

Guoqiang Jian

Lisa J Enman

Hailong Zhou

Clement Lansalot-Matras

Aaron Dangerfield

Muthukumar Kaliappan

Zhonghua Yao

Shaun Garratt

Todd Schroeder

Jayoung Choi

Ghazal Saheli

Pratham Jain

Shaun Garrett

Woo-Hee Kim

Min-Kyu Kim

A method includes providing, within an etch chamber, a base structure including a target layer disposed on a substrate, and an etch mask disposed on the target layer, dry etching, within the etch chamber, the target layer using thionyl chloride to obtain a processed base structure, and after forming the plurality of features. The processed base structure includes a plurality of features and a plurality of openings defined by the etch mask. The method further includes removing the processed base structure from the etch chamber. In some embodiments, the target layer includes carbon. In some embodiments, the dry etching is performed at a sub-zero degree temperature.

Dry etching with etch byproduct self-cleaning

A method includes performing a dry etch process to remove a portion of a first layer disposed on a second layer of a stack of alternating layers. The first layer includes a first material and the second layer includes a second material different from the first material, and the dry etch process forms a passivation layer including a byproduct on surfaces of the second material. A amount of first material of the portion of the first layer remains after performing the dry etch process, The method further includes introducing a halide gas to enhance the passivation layer on the surfaces of the second material.

Enhanced etch selectivity using halides

Described herein is a method for selectively cleaning and/or etching a sample. The method includes selectively forming a film in a trench of a substrate such that the trench may be selectively etched. A polymer film is deposited on the bottom surface of the trench without being deposited on the side wall. A second film is selectively formed in the trench without forming the second film on the polymer film. The polymer is then removed from the bottom surface of the trench and then etching is performed on the bottom surface of the trench using an etch chemistry, wherein the second film protects the side wall from being etched.

Selective etch of a substrate

Methods for depositing film comprise depositing an aluminum-containing gap-fill film in a bottom-up manner in a feature of a substrate surface. The substrate can be sequentially exposed to an aluminum-containing precursor, a reactant, a fluorinating agent, and an etchant any number of times to promote bottom-up growth of the film in the feature.

Gap-fill with aluminum-containing films

Processing methods for forming iridium-containing films at low temperatures are described. The methods comprise exposing a substrate to iridium hexafluoride and a reactant to form iridium metal or iridium silicide films. Methods for enhancing selectivity and tuning the silicon content of some films are also described.

Low temperature deposition of iridium containing films

Methods of depositing platinum group metal films of high purity, low resistivity, and good conformality are described. A platinum group metal film is formed in the absence of an oxidant. The platinum group metal film is selectively deposited on a conductive substrate at a temperature less than 200° C. by using an organic platinum group metal precursor.

Electronic device having an oxygen free platinum group metal film

Methods of depositing metal films comprising exposing a substrate surface to a first metal precursor followed by a non-oxygen containing reducing agent comprising a second metal to form a zero-valent first metal film are described. The reducing agent has a metal center that is more electropositive than the metal center of the first metal precursor. In some embodiments, methods of depositing ruthenium films are described in which a substrate surface is exposed to a ruthenium precursor to form a ruthenium containing film on the substrate surface followed by exposure to a non-oxygen containing reducing agent to reduce the ruthenium containing film to a zero-valent ruthenium film and generate an oxidized form of the reducing agent.

Ruthenium film deposition using low valent metal precursors

Embodiments of the present disclosure generally relate to protective coatings on aerospace components and methods for depositing the protective coatings. In one or more embodiments, a method for producing a protective coating on an aerospace component includes depositing a metal oxide template layer on the aerospace component containing nickel and aluminum (e.g., nickel-aluminum superalloy) and heating the aerospace component containing the metal oxide template layer during a thermal process and/or an oxidation process. The thermal process and/or oxidation process includes diffusing aluminum contained within the aerospace component towards a surface of the aerospace component containing the metal oxide template layer, oxidizing the diffused aluminum to produce an aluminum oxide layer disposed between the aerospace component and the metal oxide template layer, and removing at least a portion of the metal oxide template layer while leaving the aluminum oxide layer.

Methods for depositing sacrificial coatings on aerospace components

Memory devices and methods of forming memory devices are described. The memory devices comprise two work-function metal layers, where one work-function layer has a lower work-function than the other work-function layer. The low work-function layer may reduce gate-induced drain leakage current losses. Methods of forming memory devices are also described.

Reducing gate induced drain leakage in DRAM wordline

Methods of depositing platinum group metal films of high purity, low resistivity, and good conformality are described. A platinum group metal film is formed in the absence of an oxidant. The platinum group metal film is selectively deposited on a conductive substrate at a temperature less than 200&#xb0; C. by using an organic platinum group metal precursor.

Oxygen free deposition of platinum group metal films

Processing methods comprising exposing a substrate to a first reactive gas comprising a cyclopentadienyl nickel complex and a second reactive gas comprising a sub-saturative amount of oxygen to form a nickel oxide film with a carbon content in the range of about 2 to about 10 atomic percent are described.

ALD process for NiO film with tunable carbon content

Metal coordination complexes comprising at least one diazabutadiene based ligand having a structure represented by: where Rand Rare selected from the group consisting of C4-C10 alkyl groups; and Rand Rare each independently selected from the group consisting of H, C1-C6 alkyl, cycloalkyl, or aryl groups and the difference in the number of carbons in Rand Ris greater than or equal to 2. Processing methods using the metal coordination complexes are also described.

Metal precursors with modified diazabutadiene ligands for CVD and ALD and methods of use

Processing methods comprising exposing a substrate to a first reactive gas comprising an ethylcyclopentadienyl ruthenium complex or a cyclohexadienyl ruthenium complex and a second reactive gas comprising water to form a ruthenium film are described.

Water assisted highly pure ruthenium thin film deposition

Processing methods comprising selectively orthogonally growing a first material through a mask to provide an expanded first material are described. The mask can be removed leaving the expanded first material extending orthogonally from the surface of the first material. Further processing can create a self-aligned via.

Methods of forming self-aligned vias

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San Jose, CA, United States of America

Jeffrey W Anthis