National Technology & Engineering Solutions of Sandia, LLC

Sandia Corporation

Varioscale, Inc.

Jeffrey Stevens

Michael David Henry

Randy J Shul

Robert K Grubbs

David P Adams

Ronald S Goeke

Karl Douglas Greth

V Carter Hodges

Kira L Fishgrab

Edward I Cole

Joshua Beutler

Mary A Miller

Scott Silverman

John Joseph Clement

The present invention relates to a lateral via to provide an electrical connection to a buried conductor. In one instance, the buried conductor is a through via that extends along a first dimension, and the lateral via extends along a second dimension that is generally orthogonal to the first dimension. In another instance, the second dimension is oblique to the first dimension. Components having such lateral vias, as well as methods for creating such lateral vias are described herein.

Lateral vias for connections to buried microconductors and methods thereof

Lateral vias for connections to buried microconductors

The various technologies presented herein relate to utilizing visible light in conjunction with a thinned structure to enable characterization of operation of one or more features included in an integrated circuit (IC). Short wavelength illumination (e.g., visible light) is applied to thinned samples (e.g., ultra-thinned samples) to achieve a spatial resolution for laser voltage probing (LVP) analysis to be performed on smaller technology node silicon-on-insulator (SOI) and bulk devices. Thinning of a semiconductor material included in the IC (e.g., backside material) can be controlled such that the thinned semiconductor material has sufficient thickness to enable operation of one or more features comprising the IC during LVP investigation.

Visible light laser voltage probing on thinned substrates

Growing community of inventors

Albuquerque, NM, United States of America

Jeffrey Stevens