Fujitsu Corporation

Jeffrey Scott Cross

Mineharu Tsukada

Yoshimasa Horii

Mitsushi Fujiki

Alexei L Gruverman

Angus Kingon

Kenji Maruyama

John David Baniecki

Shan Sun

Katsuyoshi Matsuura

Satoru Mihara

Kenji Nomura

Takeyasu Saito

Kazuaki Kondo

Naoyuki Satoh

George Hickert

Soichiro Ozawa

Tsuyoshi Sakai

Igor Stolichnov

After a step of fabricating a MOS transistor () on a semiconductor substrate () and further steps up to bury a W plug (), an Ir film (), an IrOfilm (), a PZT film (), and an IrOfilm () are formed sequentially over the entire surface. The composition of the PZT film () is such that the content of Pb exceeds that of Zr and that of Ti. After processing the Ir film (), the IrOfilm (), the PZT film () and the IrOfilm (), annealing is effected to remedy the damage to the PZT film () that is caused when the IrOfilm () is formed and to diffuse Ir in the IrOfilm () into the PZT film (). As a result, the Ir diffused into the PZT film () concentrates at an interface between the IrOfilm () and the PZT film () and at grain boundaries in the PZT film (), and the Ir concentrations at the interface and boundaries are higher than those in the grains.

Ferroelectric capacitor and method of manufacturing the same

Two ferroelectric capacitors including a PZT film are connected to one MOS transistor. Electrodes of the ferroelectric capacitor are arranged above a main plane of a substrate parallel to the main plane. Therefore, high capacity can be obtained easily. Furthermore, a (001) direction of the PZT film is parallel to the virtual straight line linking between the two electrodes. Therefore, a direction in which an electric field is applied coincides with a direction of a polarization axis, so that high electric charge amount of remanent polarization can be obtained.

Semiconductor device and method of manufacturing the same

A semiconductor device comprises a substrate, a ferroelectric capacitor which includes a ferroelectric film on the substrate, and a stress application layer which applies tensile or compressive stress to the ferroelectric film of the ferroelectric capacitor by applying stress to the substrate.

Semiconductor device and its manufacture method, and measurement fixture for the semiconductor device

Semiconductor device having die attachment and die pad for applying tensile or compressive stress to the IC chip

Semiconductor device and method for manufacturing the same

Semiconductor device having a stress layer for applying tensile of compressive stress to the ferroelectric film

After placing a sample in a heating vacuum chamber, a probe is climbed down to a position above a capacitor formed in the sample whose electrical characteristic is supposed to be measured. The probe is contacted with both electrodes of the capacitor, which is confirmed by electrical measurement. In order to measure capacitance loss, after filling Ngas up in the heating vacuum chamber, a mixed gas is introduced from a line for 3 vol % H+97 vol % Nto the inside of the heating vacuum chamber. After pressure has been stabilized there, capacitance loss and lapsed time are measured at the same time. Concentrations of residual HO and residual Oin the heating vacuum chamber are measured by a quadrupole mass spectrometer QMS; and at the same time, concentrations of each of residual HO and residual Oin an exhaust gas are measured by sensors.

Inspection device and inspection method of dielectric film, and method of manufacturing semiconductor device

A ferroelectric capacitor adapted for a non-volatile semiconductor memory comprises a base substrate with an insulating surface, such as a semiconductor substrate formed with semiconductor elements and having a top insulator film, a lower electrode formed on the insulating surface, an oxide ferroelectric layer formed on the lower electrode, a first oxide upper electrode formed on and in contact with the upper surface of the oxide ferroelectric layer, and a second oxide upper electrode formed on the first oxide upper electrode, wherein one of the first and second oxide upper electrodes compromises SRO that contains at least 0.1 at % additive and the other of the first and second oxide upper electrodes comprises IrO. A non-volatile semiconductor memory or ferroelectric capacitor, having a PZT ferroelectric layer, excellent in characteristics, and capable of being manufactured efficiently, is provided.

Ferroelectric capacitor having upper electrode lamination and manufacture thereof

A method for the fabrication of a cap layer on a top electrode layer of a ferroelectric capacitor includes the steps of depositing an amorphous layer, usually made of Sr Ru O , on the top electrode and then annealing the amorphous layer in two stages in order convert the amorphous layer into the cap layer. The first anneal is performed at 500&deg; C. to 700&deg; C. in a non-oxidizing atmosphere, such as nitrogen, and converts the amorphous layer into a crystallized layer of Sr Ru O . The second anneal is performed at 300&deg; C. to 500&deg; C. in an oxidizing atmosphere, such as oxygen, and converts the crystallized layer into the cap layer. The method is applied to the formation of a ferroelectric capacitor element of an integrated semiconductor device.

Process for producing a strontium ruthenium oxide protective layer on a top electrode

A ferroelectric capacitor adapted for a non-volatile semiconductor memory comprises a base substrate with an insulating surface, such as a semiconductor substrate formed with semiconductor elements and having a top insulator film, a lower electrode formed on the insulating surface, an oxide ferroelectric layer formed on the lower electrode, a first oxide upper electrode formed on and in contact with the upper surface of the oxide ferroelectric layer, and a second oxide upper electrode formed on the first oxide upper electrode, wherein one of the first and second oxide upper electrodes comprises SRO that laminating a first and a second oxide upper electrodes onto said oxide contains at least 0.1 at % additive and the other of the first and second oxide upper electrodes comprises IrO . A non-volatile semiconductor memory or ferroelectric capacitor, having a PZT ferroelectric layer, excellent in characteristics, and capable of being manufactured efficiently, is provided.

Ferroelectric capacitor having upper electrode lamination

A ferroelectric capacitor includes a lower electrode, a ferroelectric capacitor insulation film formed on the lower electrode and an upper electrode formed on the ferroelectric capacitor insulation film, wherein the ferroelectric capacitor insulation film has a composition of PZT and contains an excess amount of Pb with respect to a stoichiometry of PZT.

Ferroelectric capacitor having a PZT layer with an excess of Pb

The semiconductor device comprises a first electrode , a ferroelectric film formed on the first electrode, and a second electrode formed on the ferroelectric film. The first electrode or the second electrode comprises SrRuO films with Pb and/or Bi added. Pb and Bi are added to the SRO film, whereby the diffusion of the Pb and Bi contained in the ferroelectric film into the SRO film are suppressed, which leads to an improvement of capacitor ferroelectric properties. Thus, the semiconductor device can realize low-voltage operation and hydrogen deterioration resistance by using the SRO film.

Semiconductor device

A method of manufacturing an electronic device including an oxide film of perovskite-type, said method comprising the steps of forming on a base substrate a first conductive oxide film of perovskite type in an atmosphere of reduced pressure at a first temperature, and performing heat treatment on the first conductive oxide film in an oxidizing atmosphere containing oxygen at a second temperature which is higher than the first temperature.

Growing community of inventors

Kawasaki, Japan

Jeffrey Scott Cross