Corning Incorporated

Soitec

S.o.i.tec Silicon on Insulator Technologies

Jeffrey Scott Cites

James Gregory Couillard

Michael John Moore

Kishor Purushottam Gadkaree

Robert Michael Morena

Shandon Dee Hart

Richard Orr Maschmeyer

Alex Usenko

Sarko Cherekdjian

Nadia Ben Mohamed

Daniel Delprat

Mark Stephen Friske

William Keith Fisher

Chunhe Zhang

Gordon Charles Brown

Ta-Ko Chuang

James Joseph Price

Sinue Gomez

Sean Matthew Garner

John Christopher Thomas

Thomas Michael Cleary

Steven Joseph Gregorski

Charles Michael Darcangelo

Charles Mitchel Sorensen, Jr

Mark Andrew Stocker

Steven S Rosenblum

George F Wildeman

John Frederick Bayne

Jonathan Earl Walter

Alexander Usenko

Ta Ko Chuang

L Christopher Henning

Fang Wen

Kristen Lorraine Barefoot

Laminated structures comprise a metal sheet including a first face and a second face with a thickness of from about 0.5 mm to about 2 mm extending between the first face and the second face. The laminated structure further includes a first chemically strengthened glass sheet including a thickness of less than or equal to about 1.1 mm and a first interlayer attaching the first chemically strengthened glass sheet to the first face of the metal sheet. In further examples, methods of manufacturing a laminated structure comprise the steps of laminating with a metal sheet and a first chemically strengthened glass sheet together with an interlayer.

Glass/metal laminated structures and methods of manufacturing laminated structures

A glass laminate structure comprising an external glass sheet and an internal glass sheet wherein one or both of the glass sheets comprises SiO+BO+AlO&#x2265;86.5 mol. %. and RO&#x2014;RO&#x2014;AlO&#x3c;about 5 mol. %. Exemplary glass sheet can comprise between about 69-80 mol. % SiO, between about 6-12 mol. % AlO, between about 2-10 mol. % BO, between about 0-5 mol. % ZrO, LiO, MgO, ZnO and PO, between about 6-15 mol. % NaO, between about 0-3 mol. % KO and CaO, and between about 0-2 mol. % SnOto provide a mechanically robust and environmentally durable structure.

Strengthened glass and compositions therefor

A thin lightweight glass fascia for appliances. The fascia may be a seamless shaped glass fascia for an appliance, such as a glass fascia that wraps around at least two opposing edges of an appliance. The glass fascia may seamlessly incorporate a display or control panel under the fascia. A mounting arrangement that facilitates quick fascia removal and replacement may be provided. The fascia may be a chemically-strengthened glass sheet having a thickness of less than 2.0 mm, and a near-surface region under a compressive stress, wherein the compressive stress (CS) at a surface of the first glass sheet is greater than 300 MPa and extends to a depth of layer of at least 20 micrometers.

Appliance fascia and mounting therefore

A semiconductor-on-glass substrate having a relatively stiff (e.g. relatively high Young's modulus of 125 or higher) stiffening layer or layers placed between the silicon film and the glass in order to eliminate the canyons and pin holes that otherwise form in the surface of the transferred silicon film during the ion implantation thin film transfer process. The new stiffening layer may be formed of a material, such as silicon nitride, that also serves as an efficient barrier against penetration of sodium and other harmful impurities from the glass substrate into the silicon film.

Semiconductor on glass substrate with stiffening layer

A process of making semiconductor-on-glass substrates having a relatively stiff (e.g. relatively high Young's modulus of 125 or higher) stiffening layer between the silicon film and the glass in an ion implantation thin film transfer process by depositing a stiffening layer or layers on one of the donor wafer or the glass substrate in order to eliminate the canyons and pin holes that otherwise form in the surface of the transferred silicon film during the thin film transfer process. The new stiffening layer may be formed of a material, such as silicon nitride, that also serves as an efficient barrier against penetration of sodium and other harmful impurities from the glass substrate into the silicon film.

Process of making semiconductor on glass substrates with a stiffening layer

Semiconductor on glass substrate with stiffening layer and process of making the same

Methods and apparatus provide for forming a semiconductor-on-insulator (SOI) structure, including subjecting a implantation surface of a donor semiconductor wafer to an ion implantation step to create a weakened slice in cross-section defining an exfoliation layer of the donor semiconductor wafer; and subjecting the donor semiconductor wafer to a spatial variation step, either before, during or after the ion implantation step, such that at least one parameter of the weakened slice varies spatially across the weakened slice in at least one of X- and Y- axial directions.

Methods and apparatus for producing semiconductor on insulator structures using directed exfoliation

Methods and apparatus provide for forming a semiconductor-on-insulator (SOI) structure, including subjecting a implantation surface of a donor semiconductor wafer to an ion implantation step to create a weakened slice in cross-section defining an exfoliation layer of the donor semiconductor wafer; and subjecting the donor semiconductor wafer to a spatial variation step, either before, during or after the ion implantation step, such that at least one parameter of the weakened slice varies spatially across the weakened slice in at least one of X- and Y-axial directions.

Disclosed are methods for making SOI and SOG structures using purified ion shower for implanting ions to the donor substrate. The purified ion shower provides expedient, efficient, low-cost and effective ion implantation while minimizing damage to the exfoliation film.

Producing SOI structure using high-purity ion shower

Methods and apparatus provide for forming a semiconductor-on-insulator (SOI) structure, including subjecting a implantation surface of a donor semiconductor wafer to an ion implantation step to create a weakened slice in cross-section defining an exfoliation layer of the donor semiconductor wafer; and subjecting the donor semiconductor wafer to a spatial variation step, either before, during or after the ion implantation step, such that at least one parameter of the weakened slice varies spatially across the weakened slice in at least one of X-and Y-axial directions.

A method of polishing a semiconductor layer formed on a transparent substrate is described, the method including measuring the thickness of the semiconductor from the substrate side of the semiconductor layer simultaneously with the polishing, and using the thickness measurement to modify the polishing.

Method of polishing a semiconductor-on-insulator structure

A broadband interconnection device ( ) used for interconnection between a first transmission line ( ) and a second transmission line ( ), has a substrate ( ) with the first transmission line ( ) defined at a first side ( ) on a first surface ( ), the first transmission line ( ) including a signal conductor ( ) and at least one ground conductor ( or ), a signal conductor ( ) of the second transmission line ( ) defined on an opposite side ( ) of the first surface ( ), and a ground plane ( ) of the second transmission line ( ) on an opposed surface ( ), the signal conductor ( ) of the first transmission line ( ) being electrically connected to the signal conductor ( ) of the second transmission line ( ) on the first surface ( ). On the opposed surface ( ), the ground plane ( ) of the second transmission line ( ), has at least one protrusion ( ) aligned with the signal conductor ( ) of the first transmission line ( ).

Broadband uniplanar coplanar transition

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Jeffrey Scott Cites