Texas Instruments Corporation

Jeffrey Salvacion Solas

Maricel Fabia Escaño

Katleen Fajardo Timbol

Christlyn Faith Arias

A described example includes: a semiconductor die having a device side surface and an opposing backside surface, the backside surface mounted to a die pad of a lead frame, the lead frame comprising conductive leads spaced from the die pad; a conductor layer overlying the device side surface; bond pads including bond pad conductors formed in the conductor layer, a nickel layer over the bond pad conductors, and a palladium or gold layer over the nickel layer; conductor traces formed in the conductor layer, the conductor traces free from the nickel layer and the palladium or gold layer; bond wires bonded to the bond pads electrically coupling the bond pads to conductive leads; and mold compound covering the semiconductor die, the bond pads, the bond wires, and portions of the lead frame, wherein portions of the conductive leads are exposed from the mold compound to form terminals.

Selective plating for packaged semiconductor devices

A semiconductor device includes a semiconductor die having a surface and sensing circuitry at a sensing region of the surface. A tubular wall of a metal material has an inner sidewall around the sensing region to provide a sensing cavity that extends from the surface of the semiconductor die to an opening at a distal edge thereof. The tubular wall includes a proximal portion and a distal flange portion. The proximal portion extends longitudinally from the surface. The distal flange portion extends radially outwardly from the proximal portion a first distance and radially inwardly from the proximal portion a second distance that is less than the first distance.

Sensor having tubular walled sensing cavity

In some examples a method comprises forming an insulating member over a circuit on a device side of a semiconductor die, removing a portion of the insulating member to produce a cavity, and forming a seed layer on the insulating member and within the cavity. In addition, the method includes forming a conductive member on the seed layer in the cavity, wherein the conductive member comprises a plurality of layers of different metal materials. Further, the method includes removing the seed layer from atop the insulating member, outside the cavity, after forming the conductive member in the cavity such that a remaining portion of the seed layer is positioned between the conductive member and the insulating member.

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Angeles, Philippines

Jeffrey Salvacion Solas