Applied Materials, Inc.

Jeffrey Ronald Campbell

David K Carlson

Satheesh Kuppurao

Brian Hayes Burrows

Kailash Kiran Patalay

Howard Beckford

Herman Diniz

Xiaowei Li

Errol Antonio Sanchez

Zouming Zhu

A method and apparatus for delivering precursor materials to a processing chamber is provided. In one embodiment, a deposition apparatus is provided. The apparatus includes a chamber having a longitudinal axis, and a gas distribution assembly coupled to a sidewall of the chamber. The gas distribution assembly comprises a plurality of plenums coupled to one or more gas sources, an energy source positioned to provide energy to each of the plurality of plenums, and a variable power source coupled to the energy source, wherein the gas distribution assembly provides a flow path through the chamber that is normal to the longitudinal axis of the chamber.

Independent radiant gas preheating for precursor disassociation control and gas reaction kinetics in low temperature CVD systems

A method and apparatus for delivering precursor materials to a processing chamber is described. The apparatus includes a gas distribution assembly having multiple gas delivery zones. Each zone may include a plenum having an inlet for receiving a precursor gas and at least one source of non-thermal energy, such as an infrared light source. The at least one source of non-thermal energy is may be varied to control the intensity of wavelengths from the infrared light source.

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San Francisco, CA, United States of America

Jeffrey Ronald Campbell