International Business Machines Corporation

Jeffrey R Barber

David Stanasolovich

Harish N Kotecha

Charles P Breiten

Jacob F Theisen

David D Meyer

A process for making borderless contacts through an insulating layer to active regions of a semiconductor device is disclosed. After deposition of a silicon nitride layer and an insulation glass layer on a substrate coating semiconductor devices, the contact windows are etched. The windows are etched through the glass layer with BCl.sub.2 or CHF.sub.3 /CF.sub.4 etch gases. Next, the windows are etched through the silicon nitride with CH.sub.3 F or O.sub.2 /CHF.sub.3 gases.

Method for making borderless contacts

A method for providing increased dopant concentration in selected regions of semiconductors by providing field implant dopant in the transition region located below the 'bird's beak' region and between the field and active regions of a semiconductor. The method comprises the steps of: forming a thin insulating layer on the surface of a semiconductor substrate; depositing a thin anti-oxidant layer on the insulating layer; depositing a layer of photoresist on the anti-oxidant layer; selectively etching the anti-oxidant layer; ion-implanting the field region of the semiconductor substrate; providing spacers on the sides of the anti-oxidant layer; and oxidizing the semiconductor substrate.

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Pittsburgh, PA, United States of America

Jeffrey R Barber