Kemet Electronics Corporation

Jeffrey Poltorak

Brandon Summey

Yongjian Qiu

Philip Michael Lessner

Chris Stolarski

Yuri Freeman

Christian L Guerrero

Randolph Stephen Hahn

Robert Ramsbottom

Lance Paul Thornton

Steve C Hussey

Antony P Chacko

Albert Kennedy Harrington

Keith R Brenneman

David W Jacobs

Randy Hahn

John Tony Kinard

John D Prymak

Steven C Hussey

Yongjian Qui

James C Bates, Jr

James W Satterfield, Jr

Kevin A Agosto

Courtney Elliott

Peter A Blais

Phillip M Lessner

An improved circuit board core material, and method of making the circuit board core material, is provided wherein the circuit board core material is particularly suitable for use in a circuit board. The circuit board core material comprises a laminate. The laminate comprises a prepreg layer with a first clad layer on the prepreg layer wherein the prepreg layer comprises a pocket. An electronic component is in the pocket wherein the electronic component comprises a first external termination and a second external termination. The first external termination is laminated to, and in electrical contact with, the first clad layer and said second external termination is in electrical contact with a conductor.

Electrically functional circuit board core material

An improved capacitor is provided wherein the capacitor has an improved bond between the anode and anode wire. The anode comprises a pressed anode powder comprising a first density region and a second density region wherein the second density region has a higher density than the first density region. An anode wire extends into the second density region wherein the anode wire in the second density region is distorted by compression. This allows for better utilization of the metal powder surface area by allowing a lower bulk press density and lower sinter temperature while still achieving the necessary wire pull strength. In addition, this invention when utilized with deoxidation steps, results in sufficient wire pull strengths not possible otherwise.

Wire to anode connection

An improved capacitor, and method of making the capacitor, is described. The capacitor comprises an upper reinforced encapsulant layer and a lower reinforced encapsulant layer with a capacitive element between the upper reinforced encapsulant layer and lower reinforced encapsulant layer. The capacitive element comprises an anode, a dielectric on the anode and a cathode on the dielectric. An internal reinforced encapsulant layer is between the upper reinforced encapsulant layer and lower reinforced encapsulant layer.

Device and process for forming membrane type capacitor devices

An improved capacitor is provided wherein the capacitor has improved volumetric efficiency. The capacitor comprises a capacitive element comprising an anode, a dielectric on the anode and a cathode on the dielectric. An encapsulant at least partially encases the capacitive element wherein the encapsulant comprises at least one membrane between the capacitive element and an external surface of the encapsulant.

Capacitor and method of manufacture utilizing membrane for encapsulant thickness control

An improved capacitor is provided wherein the improved capacitor has improved ESR. The capacitor has a fluted anode and an anode wire extending from the fluted anode. A dielectric is on the fluted anode. A conformal cathode is on the dielectric and a plated metal layer is on the carbon layer.

Low ESR capacitor

An improved capacitor is provided with at least one anode having a dielectric on the anode and an anode lead extending from the anode. A conductive cathode layer is on the dielectric. An anode leadframe is electrically connected to the anode and a cathode leadframe is electrically connected to the cathode. An encapsulant encases the anode, a portion of the anode leadframe and a portion of the cathode leadframe such that the anode leadframe extends from the encapsulant to form an external anode leadframe and the cathode leadframe extends from the encapsulant to form an external cathode leadframe. At least one secondary electrical connection is provided wherein the secondary electrical connection is in electrical contact with the cathode and extends through the encapsulant to the external cathode leadframe or the secondary electrical contact is in electrical contact with the anode and extends through the encapsulant to the external anode leadframe.

Solid electrolytic capacitor and method

Provided is a method for forming a capacitor. The method includes:

Solid electrolytic capacitor and method of manufacturing a solid electrolytic capacitor

An improved solid electrolytic capacitor and method of forming a solid electrolytic capacitor is described. The method includes forming an anode comprising a valve metal or conductive oxide of a valve metal wherein an anode lead extension protrudes from the anode. A dielectric is formed on the anode and a cathode layer is formed on the dielectric. The anode, dielectric, and cathode layer are encased in a non-conducting material and the anode lead extension is exposed outside of the encasement at a side surface. A conductive metal layer is adhered to the anode lead extension which allows termination preferably by electrically connecting a preformed solid metal terminal, most preferably an L shaped terminal, to the conductive metal layer at the side surface.

Solid electrolytic capacitor and method of manufacture

A capacitor is described with an NbO anode. The capacitor has an NbO anode and an NbO anode lead extending from the NbO anode. A dielectric is on the NbO anode and a conductor is on the dielectric.

NbO capacitors with improved performance and higher working voltages

A method for treating anodes of refractory valve metals by deoxidizing the anodes using Mg in an oven, prior to sintering. The process limits free oxygen in the metal compact and improves performance of a capacitor, especially with regards to rated voltage.

Growing community of inventors

Simpsonville, SC, United States of America

Jeffrey Poltorak