Dow Corning Corporation

The Dow Chemical Company

Jeffrey Nicholas Bremmer

Kyuha Chung

Chandan K Saha

Michael John Spaulding

Walter J Schrenk

Mark Alan Barger

Ralph E Ayres

Ranganath K Shastri

Youfan Liu

Herbert C Roehrs

Eric S Moyer

Craig Rollin Yeakle

Sheng Wang

Michael Bourbina

Craig R Yeakle

A method of treating the surface of a semiconductor wafer through the formation of a bonding system is provided in order to enhance the handling of the wafer during subsequent processing operations. The method generally comprises the steps of applying a release layer and an adhesive to different wafers; bonding the wafers together to form a bonded wafer system; performing at least one wafer processing operation (e.g., wafer grinding, etc.) to form a thin processed wafer; debonding the wafers; and then cleaning the surface of the processed wafer with an organic solvent that is capable of dissolving the release layer or any residue thereof. The adhesive includes a vinyl-functionalized polysiloxane oligomeric resin, a Si&#x2014;H functional polysiloxane oligomeric resin, a catalyst, and optionally an inhibitor, while the release layer is comprised of either a silsesquioxane-based resin or a thermoplastic resin.

Wafer bonding system and method for bonding and debonding thereof

This invention pertains to a method for producing thermally stable multi-layer coatings and the coatings produced therefrom. The multi-layer coating is comprised of a first coating produced from hydrogen silsesquioxane having a thickness of 1.25 to 2.25 &mgr;m and a second coating comprising silicon dioxide having a thickness of at least 100 nm. The method for producing the first coating comprises applying a fillerless hydrogen silsesquioxane resin composition onto a substrate and thereafter heating the hydrogen silsesquioxane resin at a temperature of 150&deg; C. to 500&deg; C. for a sufficient period of time to produce a crack-free coating having a thickness of 1.25 &mgr;m to 2.25 &mgr;m. The second coating is produced by depositing, preferably by PECVD, silicon dioxide over the first coating at a thickness of at least 100 nm.

Thermally stable dielectric coatings

This invention pertains to a method for producing crack-free, insoluble, greater than 1.25 .mu.m thick coatings from hydrogen silsesquioxane resin compositions. The method for producing the coating comprises applying a fillerless hydrogen silsesquioxane resin composition onto a substrate and thereafter heating the hydrogen silsesquioxane resin at a temperature of less than 500.degree. C. for a controlled period of time to produce the crack-free coating having a thickness of greater than 1.25 .mu.m. The resins may be cured in an inert or oxygen containing environment.

Method for producing thick crack-free coatings from hydrogen

This invention pertains to a method of producing low dielectric coatings from hydrogen silsesquioxane resin. The method for producing the coatings comprises applying a film of hydrogen silsesquioxane resin onto a substrate and thereafter curing the film by first heating at a temperature of about 325.degree. C. to 350.degree. C. thereafter heating at a temperature of about 400.degree. C. to 450.degree. C. until the normalized SiH bond density is 50 to 80%. This two step curing process produces films having lower dielectric constant and improved mechanical properties.

Method for producing low dielectric coatings from hydrogen silsequioxane

Method for producing thick crack-free coating from hydrogen

This invention pertains to a method for producing an insoluble coating on a substrate by curing a composition comprising hydrogen silsesquioxane at a temperature of 375.degree. C. or less for a time sufficient to produce a coating having &gt;80% SiH. It has been found that when the hydrogen silsesquioxane resin is cured at a temperature of 375.degree. C. or less that that the insoluble SiH containing coating shows improved film stress.

Method of producing coatings on electronic substrates

Methods and apparatus are provided for making multilayer plastic articles. Initially, two or more streams of diverse thermoplastic materials are provided. Layers are formed from these streams and are arranged in a layered first composite stream. The first composite stream may be directly formed into a desired configuration by a molding process or may be manipulated to form a second composite stream having an increased number of layers before being formed into the desired configuration. The resulting articles are comprised of a number of discrete and substantially continuous layers.

Method and apparatus for producing multilayer plastic articles

Methods and apparatus are provided for making multilayer plastic articles. Initially, two or more streams diverse thermoplastic materials are provided. Layers are foraged from these streams and are arranged in a layered first composite stream. The first composite stream may be directly formed into a desired configuration by a molding process or may be manipulated to form a second composite stream having an increased number of layers before being formed into the desired configuration. The resulting articles are comprised of a number of discrete and substantially continuous layers.

Growing community of inventors

Midland, MI, United States of America

Jeffrey Nicholas Bremmer