General Electric Company

Novatrans Group Sa

Chiaro Networks Ltd

Jeffrey Michael Levy

Arie Shahar

Avishai Ofan

Yaron Glazer

Rotem Har-Lavan

Ron Naaman

Erez Halahmi

Mark David Fries

Moshe Cohen-Erner

Gilad Diamant

Tamar Ravon

Nery Ben-Azar

A radiation detector is provided including a cathode, an anode, and a semiconductor wafer. The semiconductor wafer has opposed first and second surfaces. The cathode is mounted to the first surface, and the anode is mounted to the second surface. The semiconductor wafer is configured to be biased by a voltage between the cathode and the anode to generate an electrical field in the semiconductor wafer and to generate electrical signals responsive to absorbed radiation. The electrical field has an intensity having at least one local maximum disposed proximate to a corresponding at least one of the first surface or second surface.

Systems and methods for detectors having improved internal electrical fields

A radiation detector processing assembly is provided including at least one application specific integrated circuit (ASIC). The radiation detector processing assembly includes plural input channels, a common readout, and a readout channel. Each input channel is configured to receive an input corresponding to a detection event from a pixel of a pixelated detector. The common readout is operably coupled to the plural input channels, and is configured to receive a corresponding output signal from each input channel. Each corresponding output signal has a unique address identifying the corresponding input channel. The readout channel is configured to receive a corresponding readout output from the common readout. The readout output includes output signals from a corresponding group of input channels.

Systems and methods for reduced size detector electronics

A radiation detector assembly is provided including a semiconductor detector, pixelated anodes, and at least one processor. The pixelated anodes are disposed on a surface of the semiconductor detector, and configured to generate a primary signal responsive to reception of a photon and a secondary signal responsive to an induced charge caused by reception of a photon by at least one adjacent anode. The at least one processor is operably coupled to the pixelated anodes, and configured to define sub-pixels for each pixelated anode; acquire primary signals and secondary signals from the pixelated anodes; determine sub-pixel locations for acquisition events using the primary and secondary signals; generate a sub-pixel energy spectrum for each sub-pixel; apply at least one energy calibration parameter to adjust the sub-pixel energy spectra for each pixelated anode; and, for each pixelated anode, combine the adjusted sub-pixel energy spectra to provide a pixelated anode spectrum.

Systems and methods for improving energy resolution by sub-pixel energy calibration

A radiation detector system is provided including a semiconductor detector, plural pixelated anodes, and at least one processor. The plural pixelated anodes are disposed on a surface of the detector. At least one of the pixelated anodes is configured to generate a collected charge signal corresponding to a charge collected by the pixelated anode and to generate a non-collected charge signal corresponding to a charge collected by an adjacent anode to the pixelated anode. The at least one processor is configured to determine a collected value for the collected charge signal in the pixelated anode; determine a non-collected value for the non-collected charge signal in the pixelated anode corresponding to the charge collected by the adjacent anode; use the non-collected value for the non-collected charge signal to determine a sub-pixel location for the adjacent anode; and use the collected value to count a single event in the pixelated anode.

Systems and methods for sub-pixel location determination

A radiation detector system is provided including a semiconductor detector, plural pixelated anodes, and at least one processor. At least one of the pixelated anodes is configured to generate a collected charge signal corresponding to charge collected by the pixelated anode and to generate a non-collected charge signal corresponding to charge collected by an adjacent anode. The at least one processor includes a tangible and non-transitory memory having stored thereon instructions configured to direct the at least one processor to determine a collected value for the collected charge signal, to determine a non-collected value for the non-collected charge signal, determine a calibrated value for the non-collected charge signal, determine a total charge produced by a charge sharing event using the collected value and the calibrated value, and count the charge sharing event as a single event if the total charge exceeds a predetermined value.

Systems and methods for charge-sharing identification and correction using a single pixel

An electric device operable with a THz-range frequency of the device output is presented. The device comprises a photocathode installed in either one of a diode, triode and tetrode configuration, and is exposed to illumination. In some embodiments of the invention, the device is configured as a diode and photomixing is used for illumination of the photocathode with light in the THz range, the diode converting this input light signal into an electrical output in the THz range, which operates a signal transmitter/receiver. In some other embodiments of the invention, the device is configured as a triode or tetrode, where the electrodes have small dimensions (about 1 micron or less) and are spaced from one another a distance not exceeding 1 micron. The photocathode is kept under certain illumination, and electrical signal applied to one of the electrodes results in the THz output at one of the other electrodes.

Electron emission device having an electrodes' arrangement and an antenna circuit with operational frequency in THz-range

An electronic memory device includes at least one basic unit, which is configured as a memory cell for storing at least one bit of information. The basic unit includes a vacuum cavity for free charge carriers propagation therethrough, a region of charge carriers emission or entry into the vacuum cavity, an anode electrode which are kept under controllable voltage conditions, and at least one floating gate electrode accommodated in a path of the free charge carriers propagating through the vacuum cavity between the emission or entry region and the anode. The floating gate electrode serves for storing therein a charge indicative of the at least one bit of information.

Non-volatile memory device

Electron emission device of high current density and high operational frequency

An integrated waveguide array structure allows electrical testing of each unit for shorts between waveguide elements of the array, and shorts between waveguides and the substrate prior to assembly into a larger optico-electronic unit. Multiple waveguide array structures are formed on a wafer, each waveguide array being provided with a cross bar connected to an electrical contact at each end, such that alternate waveguide elements of the array are electrically connected. When connected to a suitable testing device, the existence of shorts between adjacent elements can be immediately detected. Following testing, the cross bar and electrical contact are removed by scribing.

Growing community of inventors

Tel Aviv, Israel

Jeffrey Michael Levy